Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region

E.A.J.M. Bente, M.S. Tahvili, B.W. Tilma, J. Kotani, M.K. Smit, R. Nötzel

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
2 Downloads (Pure)

Abstract

In this paper we report on monolithic laser devices that use InAs/InP (100) quantum dot gain material for optical amplifiers. The gain material has specific properties that can be exploited. It can provide a wide gain bandwidth around a wavelength that can be tuned with current density. In passive and hybrid modelocked lasers characteristic laser dynamics are observed. Such lasers can produced extremely chirped output as well as synchronised pulsed output on multiple wavelengths. Examples of such devices are presented and possible applications in pulsed and tunable lasers are discussed.

Original languageEnglish
Title of host publication2010 12th International Conference on Transparent Optical Networks, ICTON 2010
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Print)978-1-4244-7797-5
DOIs
Publication statusPublished - 6 Oct 2010
Event2010 12th International Conference on Transparent Optical Networks, ICTON 2010 - Munich, Germany
Duration: 27 Jun 20101 Jul 2010
Conference number: 12
http://www.nit.eu/icton2010

Conference

Conference2010 12th International Conference on Transparent Optical Networks, ICTON 2010
Abbreviated titleICTON 2010
CountryGermany
CityMunich
Period27/06/101/07/10
Internet address

Keywords

  • III-V semiconductors
  • Modelocking
  • Optical gain measurement
  • Quantum dot laser

Fingerprint Dive into the research topics of 'Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region'. Together they form a unique fingerprint.

Cite this