Modelling of high-voltage SOI-LDMOS transistors including self-heating

A.C.T. Aarts; M.J. Swanenberg; W.J. Kloosterman

Modelling of high-voltage SOI-LDMOS transistors including self-heating

A.C.T. Aarts, M.J. Swanenberg, W.J. Kloosterman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Simulation of Semiconductor Processes and Devices 2001 (Proceedings 6th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2001, Athens, Greece, September 5-7, 2001)
Editors	D. Tsoulakis, C. Tsamis
Place of Publication	New York
Publisher	Springer
Pages	246-249
ISBN (Print)	3-211-83708-6
Publication status	Published - 2001

Cite this

Aarts, A. C. T., Swanenberg, M. J., & Kloosterman, W. J. (2001). Modelling of high-voltage SOI-LDMOS transistors including self-heating. In D. Tsoulakis, & C. Tsamis (Eds.), Simulation of Semiconductor Processes and Devices 2001 (Proceedings 6th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2001, Athens, Greece, September 5-7, 2001) (pp. 246-249). Springer.

Aarts, A.C.T. ; Swanenberg, M.J. ; Kloosterman, W.J. / Modelling of high-voltage SOI-LDMOS transistors including self-heating. Simulation of Semiconductor Processes and Devices 2001 (Proceedings 6th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2001, Athens, Greece, September 5-7, 2001). editor / D. Tsoulakis ; C. Tsamis. New York : Springer, 2001. pp. 246-249

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title = "Modelling of high-voltage SOI-LDMOS transistors including self-heating",

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Aarts, ACT, Swanenberg, MJ & Kloosterman, WJ 2001, Modelling of high-voltage SOI-LDMOS transistors including self-heating. in D Tsoulakis & C Tsamis (eds), Simulation of Semiconductor Processes and Devices 2001 (Proceedings 6th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2001, Athens, Greece, September 5-7, 2001). Springer, New York, pp. 246-249.

Modelling of high-voltage SOI-LDMOS transistors including self-heating. / Aarts, A.C.T.; Swanenberg, M.J.; Kloosterman, W.J.
Simulation of Semiconductor Processes and Devices 2001 (Proceedings 6th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2001, Athens, Greece, September 5-7, 2001). ed. / D. Tsoulakis; C. Tsamis. New York: Springer, 2001. p. 246-249.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Modelling of high-voltage SOI-LDMOS transistors including self-heating

AU - Aarts, A.C.T.

AU - Swanenberg, M.J.

AU - Kloosterman, W.J.

PY - 2001

Y1 - 2001

M3 - Conference contribution

SN - 3-211-83708-6

SP - 246

EP - 249

BT - Simulation of Semiconductor Processes and Devices 2001 (Proceedings 6th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2001, Athens, Greece, September 5-7, 2001)

A2 - Tsoulakis, D.

A2 - Tsamis, C.

PB - Springer

CY - New York

ER -

Aarts ACT, Swanenberg MJ, Kloosterman WJ. Modelling of high-voltage SOI-LDMOS transistors including self-heating. In Tsoulakis D, Tsamis C, editors, Simulation of Semiconductor Processes and Devices 2001 (Proceedings 6th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2001, Athens, Greece, September 5-7, 2001). New York: Springer. 2001. p. 246-249