Modelling of dishing for metal chemical mechanical polishing

Viet H. Nguyen; P. Van der Velden; R. Daamen; H. Van Kranenburg; Pierre H. Woerlee

doi:10.1109/IEDM.2000.904364

Modelling of dishing for metal chemical mechanical polishing

Viet H. Nguyen, P. Van der Velden, R. Daamen, H. Van Kranenburg, Pierre H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

15 Citations (Scopus)

Abstract

In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter.

Original language	English
Title of host publication	International Electron Devices Meeting 2000. Technical Digest. IEDM
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	499-501
Number of pages	3
ISBN (Print)	0-7803-6438-4
DOIs	https://doi.org/10.1109/IEDM.2000.904364
Publication status	Published - 1 Jan 2000
Externally published	Yes

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10.1109/IEDM.2000.904364

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abstract = "In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter.",

author = "Nguyen, {Viet H.} and {Van der Velden}, P. and R. Daamen and {Van Kranenburg}, H. and Woerlee, {Pierre H.}",

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Modelling of dishing for metal chemical mechanical polishing. / Nguyen, Viet H.; Van der Velden, P.; Daamen, R. et al.
International Electron Devices Meeting 2000. Technical Digest. IEDM. Piscataway: Institute of Electrical and Electronics Engineers, 2000. p. 499-501.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Modelling of dishing for metal chemical mechanical polishing

AU - Nguyen, Viet H.

AU - Van der Velden, P.

AU - Daamen, R.

AU - Van Kranenburg, H.

AU - Woerlee, Pierre H.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter.

AB - In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter.

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DO - 10.1109/IEDM.2000.904364

M3 - Conference contribution

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BT - International Electron Devices Meeting 2000. Technical Digest. IEDM

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

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Modelling of dishing for metal chemical mechanical polishing

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