Modelling of dishing for metal chemical mechanical polishing

Viet H. Nguyen, P. Van der Velden, R. Daamen, H. Van Kranenburg, Pierre H. Woerlee

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

14 Citations (Scopus)


In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 2000. Technical Digest. IEDM
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages3
ISBN (Print)0-7803-6438-4
Publication statusPublished - 1 Jan 2000
Externally publishedYes


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