Abstract
Some semiconductor photonic devices show large discontinuities in the band structure. Short tunnel paths caused by this band structure may lead to an excessive tunneling current, especially in highly doped layers. Modelling of this tunnelling current is therefore important when designing photonic devices with such band structures. The traditional Kane’s tunnelling model can only be applied to homostructures. An extension to heterostructures is developed to study interband tunneling probability in InP-based heterostructures and the resulting tunnelling current is calculated.
| Original language | English |
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| Title of host publication | Proceedings of the 20th Annual Symposium of the IEEE Photonics Benelux Chapter, November 26-27, 2015, Brussels, Belgium |
| Editors | P. Kockaert, P. Emplit, S.-P. Gorza, S. Massar |
| Place of Publication | Brussels |
| Publisher | OPERA-photonics, Brussels School of Engineering |
| Pages | 27-30 |
| ISBN (Print) | 978-2-8052-0288-9 |
| Publication status | Published - 2015 |
| Event | 20th Annual Symposium of the IEEE Photonics Benelux Chapter - Université libre de Bruxelles, Brussels, Belgium Duration: 8 Feb 2016 → 9 Feb 2016 Conference number: 20 http://www.photonics-benelux.org/symp15/ |
Conference
| Conference | 20th Annual Symposium of the IEEE Photonics Benelux Chapter |
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| Country/Territory | Belgium |
| City | Brussels |
| Period | 8/02/16 → 9/02/16 |
| Other | Due to safety threats in Brussels on November 26-27, 2015, the symposium was rescheduled on February 8-9, 2016 |
| Internet address |