Modelling and design of a travelling-wave electro-optic modulator on InP

W.W. Pascher; J.H. Besten, den; D. Caprioli; X.J.M. Leijtens; M.K. Smit; R. Dijk, van

doi:10.1023/A:1022917605267

Modelling and design of a travelling-wave electro-optic modulator on InP

W.W. Pascher, J.H. Besten, den, D. Caprioli, X.J.M. Leijtens, M.K. Smit, R. Dijk, van

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Based on a rigorous vectorial analysis, a fast travelling-wave Mach-Zehnder modulator is modelled and designed. The cross-section of the semiconductor layer stack and the lossy electrodes are carefully modelled using the method of lines in order to investigate propagation characteristics, velocity and losses. This yields an accurate microwave and optical field distribution to explain the behaviour of the component. In order to enhance the modulation efficiency, design curves are derived and the cross-sectional dimensions for minimum microwave loss are determined. The loss of the optimized modulator agrees very well with small-signal measurements up to 40 GHz and HFSS simulations. The layerstack of the fabricated device is suitable for integration with InP multi-wavelength lasers.

Original language	English
Pages (from-to)	453-464
Number of pages	12
Journal	Optical and Quantum Electronics
Volume	35
Issue number	4-5
DOIs	https://doi.org/10.1023/A:1022917605267
Publication status	Published - 2003

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title = "Modelling and design of a travelling-wave electro-optic modulator on InP",

abstract = "Based on a rigorous vectorial analysis, a fast travelling-wave Mach-Zehnder modulator is modelled and designed. The cross-section of the semiconductor layer stack and the lossy electrodes are carefully modelled using the method of lines in order to investigate propagation characteristics, velocity and losses. This yields an accurate microwave and optical field distribution to explain the behaviour of the component. In order to enhance the modulation efficiency, design curves are derived and the cross-sectional dimensions for minimum microwave loss are determined. The loss of the optimized modulator agrees very well with small-signal measurements up to 40 GHz and HFSS simulations. The layerstack of the fabricated device is suitable for integration with InP multi-wavelength lasers.",

author = "W.W. Pascher and {Besten, den}, J.H. and D. Caprioli and X.J.M. Leijtens and M.K. Smit and {Dijk, van}, R.",

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AU - Pascher, W.W.

AU - Besten, den, J.H.

AU - Caprioli, D.

AU - Leijtens, X.J.M.

AU - Smit, M.K.

AU - Dijk, van, R.

PY - 2003

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N2 - Based on a rigorous vectorial analysis, a fast travelling-wave Mach-Zehnder modulator is modelled and designed. The cross-section of the semiconductor layer stack and the lossy electrodes are carefully modelled using the method of lines in order to investigate propagation characteristics, velocity and losses. This yields an accurate microwave and optical field distribution to explain the behaviour of the component. In order to enhance the modulation efficiency, design curves are derived and the cross-sectional dimensions for minimum microwave loss are determined. The loss of the optimized modulator agrees very well with small-signal measurements up to 40 GHz and HFSS simulations. The layerstack of the fabricated device is suitable for integration with InP multi-wavelength lasers.

AB - Based on a rigorous vectorial analysis, a fast travelling-wave Mach-Zehnder modulator is modelled and designed. The cross-section of the semiconductor layer stack and the lossy electrodes are carefully modelled using the method of lines in order to investigate propagation characteristics, velocity and losses. This yields an accurate microwave and optical field distribution to explain the behaviour of the component. In order to enhance the modulation efficiency, design curves are derived and the cross-sectional dimensions for minimum microwave loss are determined. The loss of the optimized modulator agrees very well with small-signal measurements up to 40 GHz and HFSS simulations. The layerstack of the fabricated device is suitable for integration with InP multi-wavelength lasers.

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DO - 10.1023/A:1022917605267

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EP - 464

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 4-5

ER -

Modelling and design of a travelling-wave electro-optic modulator on InP

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