Modeling of optical nonlinearities based on engineering the semiconductor band

G. Zhao, E.A. Patent, J.J.G.M. Tol, van der

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A simplified model is used to describe the nonlinear optical behaviors of absorption and refractive index change of semiconductors. Based on engineering the semiconductor band, the optical absorption spectrum and the dispersion of the refractive index change are calculated by means of the density-matrix theory. The dependence of absorption coefficient and refractive index change on the optical intensity is shown. The numerical results show that near the bandgap the change in refractive index is remarkable. A trade-off of optical absorption and index change should be taken for the practical nonlinear optical devices.
Original languageEnglish
Title of host publicationproc. 3rd Intern. Workshop on Challenges in Predictive Process Simulation 2002, Prague, Czech Republic
Pages69-70
Publication statusPublished - 2002
Eventconference; CHIPPS 2002, Prague; 2002-10-13; 2002-10-17 -
Duration: 13 Oct 200217 Oct 2002

Conference

Conferenceconference; CHIPPS 2002, Prague; 2002-10-13; 2002-10-17
Period13/10/0217/10/02
OtherCHIPPS 2002, Prague

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