Modeling of hot-electron effects in Si MOS devices

Research output: Thesis › Phd Thesis 1 (Research TU/e / Graduation TU/e)

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Original language	English
Qualification	Doctor of Philosophy
Awarding Institution	Electrical Engineering
Supervisors/Advisors	Klaassen, F.M., Promotor De Meyer, K., Promotor, External person van de Roer, Theo, Copromotor
Award date	20 Sept 1993
Place of Publication	Eindhoven
Publisher	Technische Universiteit Eindhoven
Print ISBNs	90-9006316-1
DOIs	https://doi.org/10.6100/IR402034
Publication status	Published - 1993

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@phdthesis{76497d169823424f8dae38121eb17a26,

title = "Modeling of hot-electron effects in Si MOS devices",

author = "P.J.H. Elias",

year = "1993",

doi = "10.6100/IR402034",

language = "English",

isbn = "90-9006316-1",

publisher = "Technische Universiteit Eindhoven",

type = "Phd Thesis 1 (Research TU/e / Graduation TU/e)",

school = "Electrical Engineering",

}