Modeling of double barrier resonant tunneling diodes : D.C. and noise model

Th.G. Roer, van de

    Research output: Book/ReportReportAcademic

    84 Downloads (Pure)
    Original languageEnglish
    Place of PublicationEindhoven
    PublisherTechnische Universiteit Eindhoven
    Number of pages67
    ISBN (Print)90-6144-285-0
    Publication statusPublished - 1995

    Publication series

    NameEUT report. E, Fac. of Electrical Engineering
    Volume95-E-285
    ISSN (Print)0929-8533

    Cite this

    Roer, van de, T. G. (1995). Modeling of double barrier resonant tunneling diodes : D.C. and noise model. (EUT report. E, Fac. of Electrical Engineering; Vol. 95-E-285). Eindhoven: Technische Universiteit Eindhoven.
    Roer, van de, Th.G. / Modeling of double barrier resonant tunneling diodes : D.C. and noise model. Eindhoven : Technische Universiteit Eindhoven, 1995. 67 p. (EUT report. E, Fac. of Electrical Engineering).
    @book{da1aa0b41515418290cee9ff1400a5ef,
    title = "Modeling of double barrier resonant tunneling diodes : D.C. and noise model",
    author = "{Roer, van de}, Th.G.",
    year = "1995",
    language = "English",
    isbn = "90-6144-285-0",
    series = "EUT report. E, Fac. of Electrical Engineering",
    publisher = "Technische Universiteit Eindhoven",

    }

    Roer, van de, TG 1995, Modeling of double barrier resonant tunneling diodes : D.C. and noise model. EUT report. E, Fac. of Electrical Engineering, vol. 95-E-285, Technische Universiteit Eindhoven, Eindhoven.

    Modeling of double barrier resonant tunneling diodes : D.C. and noise model. / Roer, van de, Th.G.

    Eindhoven : Technische Universiteit Eindhoven, 1995. 67 p. (EUT report. E, Fac. of Electrical Engineering; Vol. 95-E-285).

    Research output: Book/ReportReportAcademic

    TY - BOOK

    T1 - Modeling of double barrier resonant tunneling diodes : D.C. and noise model

    AU - Roer, van de, Th.G.

    PY - 1995

    Y1 - 1995

    M3 - Report

    SN - 90-6144-285-0

    T3 - EUT report. E, Fac. of Electrical Engineering

    BT - Modeling of double barrier resonant tunneling diodes : D.C. and noise model

    PB - Technische Universiteit Eindhoven

    CY - Eindhoven

    ER -

    Roer, van de TG. Modeling of double barrier resonant tunneling diodes : D.C. and noise model. Eindhoven: Technische Universiteit Eindhoven, 1995. 67 p. (EUT report. E, Fac. of Electrical Engineering).