Modeling dopant diffusion in strained and strain-relaxed epi-SiGe

Yi Ming Sheu; Tsung Yi Huang; Yu Ping Hu; Chih Chiang Wang; Sally Liu; Ray Duffy; Anco Heringa; Fred Roozeboom; Nick E.B. Cowern; Peter B. Griffin

doi:10.1109/SISPAD.2005.201476

Modeling dopant diffusion in strained and strain-relaxed epi-SiGe

Yi Ming Sheu, Tsung Yi Huang, Yu Ping Hu, Chih Chiang Wang, Sally Liu, Ray Duffy, Anco Heringa, Fred Roozeboom, Nick E.B. Cowern, Peter B. Griffin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

Ultra-shallow arsenic and boron diffusion in both strained and strain-relaxed SiGe has been investigated in this paper. Significant arsenic diffusion enhancement and boron diffusion retardation have been observed. Strained SiGe was found to have a stronger arsenic diffusion enhancement. Empirical equations in Arrhenius form have been created and incorporated into numerical simulation to successfully model the diffusion dopant profiles.

Original language	English
Title of host publication	2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	75-78
Number of pages	4
ISBN (Print)	4990276205, 9784990276201
DOIs	https://doi.org/10.1109/SISPAD.2005.201476
Publication status	Published - 1 Dec 2005
Externally published	Yes
Event	2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan Duration: 1 Sept 2005 → 3 Sept 2005

Conference

Conference	2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Country/Territory	Japan
City	Tokyo
Period	1/09/05 → 3/09/05

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10.1109/SISPAD.2005.201476

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Sheu, Y. M., Huang, T. Y., Hu, Y. P., Wang, C. C., Liu, S., Duffy, R., Heringa, A., Roozeboom, F., Cowern, N. E. B., & Griffin, P. B. (2005). Modeling dopant diffusion in strained and strain-relaxed epi-SiGe. In 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 (pp. 75-78). Article 1562028 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SISPAD.2005.201476

@inproceedings{5798ab8ffa1446c5be868353efd9b2ff,

title = "Modeling dopant diffusion in strained and strain-relaxed epi-SiGe",

abstract = "Ultra-shallow arsenic and boron diffusion in both strained and strain-relaxed SiGe has been investigated in this paper. Significant arsenic diffusion enhancement and boron diffusion retardation have been observed. Strained SiGe was found to have a stronger arsenic diffusion enhancement. Empirical equations in Arrhenius form have been created and incorporated into numerical simulation to successfully model the diffusion dopant profiles.",

author = "Sheu, \{Yi Ming\} and Huang, \{Tsung Yi\} and Hu, \{Yu Ping\} and Wang, \{Chih Chiang\} and Sally Liu and Ray Duffy and Anco Heringa and Fred Roozeboom and Cowern, \{Nick E.B.\} and Griffin, \{Peter B.\}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/SISPAD.2005.201476",

language = "English",

isbn = "4990276205",

pages = "75--78",

booktitle = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 ; Conference date: 01-09-2005 Through 03-09-2005",

}

Sheu, YM, Huang, TY, Hu, YP, Wang, CC, Liu, S, Duffy, R, Heringa, A, Roozeboom, F, Cowern, NEB & Griffin, PB 2005, Modeling dopant diffusion in strained and strain-relaxed epi-SiGe. in 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005., 1562028, Institute of Electrical and Electronics Engineers, Piscataway, pp. 75-78, 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005, Tokyo, Japan, 1/09/05. https://doi.org/10.1109/SISPAD.2005.201476

Modeling dopant diffusion in strained and strain-relaxed epi-SiGe. / Sheu, Yi Ming; Huang, Tsung Yi; Hu, Yu Ping et al.
2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005. Piscataway: Institute of Electrical and Electronics Engineers, 2005. p. 75-78 1562028.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Modeling dopant diffusion in strained and strain-relaxed epi-SiGe

AU - Sheu, Yi Ming

AU - Huang, Tsung Yi

AU - Hu, Yu Ping

AU - Wang, Chih Chiang

AU - Liu, Sally

AU - Duffy, Ray

AU - Heringa, Anco

AU - Roozeboom, Fred

AU - Cowern, Nick E.B.

AU - Griffin, Peter B.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Ultra-shallow arsenic and boron diffusion in both strained and strain-relaxed SiGe has been investigated in this paper. Significant arsenic diffusion enhancement and boron diffusion retardation have been observed. Strained SiGe was found to have a stronger arsenic diffusion enhancement. Empirical equations in Arrhenius form have been created and incorporated into numerical simulation to successfully model the diffusion dopant profiles.

AB - Ultra-shallow arsenic and boron diffusion in both strained and strain-relaxed SiGe has been investigated in this paper. Significant arsenic diffusion enhancement and boron diffusion retardation have been observed. Strained SiGe was found to have a stronger arsenic diffusion enhancement. Empirical equations in Arrhenius form have been created and incorporated into numerical simulation to successfully model the diffusion dopant profiles.

UR - https://www.scopus.com/pages/publications/33845911706

U2 - 10.1109/SISPAD.2005.201476

DO - 10.1109/SISPAD.2005.201476

M3 - Conference contribution

AN - SCOPUS:33845911706

SN - 4990276205

SN - 9784990276201

SP - 75

EP - 78

BT - 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005

Y2 - 1 September 2005 through 3 September 2005

ER -

Modeling dopant diffusion in strained and strain-relaxed epi-SiGe

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