Modeling dopant diffusion in strained and strain-relaxed epi-SiGe

Yi Ming Sheu, Tsung Yi Huang, Yu Ping Hu, Chih Chiang Wang, Sally Liu, Ray Duffy, Anco Heringa, Fred Roozeboom, Nick E.B. Cowern, Peter B. Griffin

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Ultra-shallow arsenic and boron diffusion in both strained and strain-relaxed SiGe has been investigated in this paper. Significant arsenic diffusion enhancement and boron diffusion retardation have been observed. Strained SiGe was found to have a stronger arsenic diffusion enhancement. Empirical equations in Arrhenius form have been created and incorporated into numerical simulation to successfully model the diffusion dopant profiles.

Original languageEnglish
Title of host publication2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages75-78
Number of pages4
ISBN (Print)4990276205, 9784990276201
DOIs
Publication statusPublished - 1 Dec 2005
Externally publishedYes
Event2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan
Duration: 1 Sep 20053 Sep 2005

Conference

Conference2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
CountryJapan
CityTokyo
Period1/09/053/09/05

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    Sheu, Y. M., Huang, T. Y., Hu, Y. P., Wang, C. C., Liu, S., Duffy, R., Heringa, A., Roozeboom, F., Cowern, N. E. B., & Griffin, P. B. (2005). Modeling dopant diffusion in strained and strain-relaxed epi-SiGe. In 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 (pp. 75-78). [1562028] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SISPAD.2005.201476