Modeling and characterization of InP-based high-speed pin-photodiodes

M. Nikoufard, X.J.M. Leijtens, Y.C. Zhu, J.J.M. Kwaspen, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

In this paper, the characteristics and a model of a side illuminated twin waveguide, pin-photodiode based on scattering parameters, is proposed. The equivalent small-signal model involves both the photodetector and the coplanar waveguide transmission line models. The measurement of the optoelectronic conversion parameter (S21) of photodetector at 1.55 µm is done by an optical heterodyne technique which demonstrates 25 GHz bandwidths. The equivalent circuit model fits well with both the measured reflection (S22) and the optoelectronic conversion parameter.
Original languageEnglish
Title of host publicationproc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands
Place of PublicationEnschede, The Netherlands
PublisherInstitute of Electrical and Electronics Engineers
Pages149-152
Publication statusPublished - 2003
Event8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands - Enschede, Netherlands
Duration: 20 Nov 200321 Nov 2003

Conference

Conference8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands
Country/TerritoryNetherlands
CityEnschede
Period20/11/0321/11/03

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