MOCVD of zirconium oxide from the zirconium guanidinate complex |ZrCp′{2-(iPrN)2CNMe2}2Cl]

C.S. Blackman, C.J. Carmalt, S.J.A. Moniz, S.E. Potts, H.O. Davies, D.C. Pugh

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Abstract

Parallel to successful studies into use of [ZrCp'{¿ 2-(iPrN)2CNMe2} 2Cl] as a precursor to the deposition of zirconium carbonitride via CVD the same precursor was utilised for the MOCVD of thin films of ZrO 2 using borosilicate glass substrates. The deposited films were of mixed phase; films deposited at temperatures below 550 °C were predominantly orthorhombic (or tetragonal), whilst films deposited at 600 °C were approximately 1:1 mixtures of monoclinic and orthorhombic (or tetragonal) ZrO2. Additionally the monoclinic phase displayed preferred orientation. Compositional analysis showed that whilst the films had significant amounts of, principally graphitic, carbon contamination, which increased with increasing deposition temperature, chlorine contamination was negligible. © The Electrochemical Society.
Original languageEnglish
Title of host publication17th International Chemical Vapor Deposition Symposium (CVD-XVII) as part of the 216th Meeting of the Electrochemical Society 4 -9 October 2009, Vienna
Place of PublicationPennington, NJ
PublisherElectrochemical Socity
Pages561-565
ISBN (Print)978-156677741-4
DOIs
Publication statusPublished - 2009

Publication series

NameECS Transactions
Volume25
ISSN (Print)1938-6737

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    Blackman, C. S., Carmalt, C. J., Moniz, S. J. A., Potts, S. E., Davies, H. O., & Pugh, D. C. (2009). MOCVD of zirconium oxide from the zirconium guanidinate complex |ZrCp′{2-(iPrN)2CNMe2}2Cl]. In 17th International Chemical Vapor Deposition Symposium (CVD-XVII) as part of the 216th Meeting of the Electrochemical Society 4 -9 October 2009, Vienna (pp. 561-565). (ECS Transactions; Vol. 25). Electrochemical Socity. https://doi.org/10.1149/1.3207640