MM20 HVMOS Model : a surface-potential-based LDMOS model for circuit simulation (Chapter 3)

A.C.T. Aarts; A. Tajic

doi:10.1007/978-90-481-3046-7_3

MM20 HVMOS Model : a surface-potential-based LDMOS model for circuit simulation (Chapter 3)

A.C.T. Aarts, A. Tajic

Mathematics and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic

3 Citations (Scopus)

Abstract

MOS Model 20 is an advanced public-domain compact LDMOS model, to be used for circuit simulation of high-voltage IC-designs. By combining the description of the MOSFET channel region with that for the drift region of an LDMOS device, MOS Model 20 includes all specific high-voltage aspects into one model. This chapter presents the physical background of the model, the model parameter extraction strategy, and ends with the verification in comparison to dc- and ac-measurements.

Original language	English
Title of host publication	Power/HVMOS Devices Compact Modeling
Editors	W. Grabinski, T. Gneiting
Place of Publication	Dordrecht
Publisher	Springer
Pages	65-93
ISBN (Print)	978-90-481-3045-0
DOIs	https://doi.org/10.1007/978-90-481-3046-7_3
Publication status	Published - 2010

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10.1007/978-90-481-3046-7_3

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abstract = "MOS Model 20 is an advanced public-domain compact LDMOS model, to be used for circuit simulation of high-voltage IC-designs. By combining the description of the MOSFET channel region with that for the drift region of an LDMOS device, MOS Model 20 includes all specific high-voltage aspects into one model. This chapter presents the physical background of the model, the model parameter extraction strategy, and ends with the verification in comparison to dc- and ac-measurements.",

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AU - Aarts, A.C.T.

AU - Tajic, A.

PY - 2010

Y1 - 2010

N2 - MOS Model 20 is an advanced public-domain compact LDMOS model, to be used for circuit simulation of high-voltage IC-designs. By combining the description of the MOSFET channel region with that for the drift region of an LDMOS device, MOS Model 20 includes all specific high-voltage aspects into one model. This chapter presents the physical background of the model, the model parameter extraction strategy, and ends with the verification in comparison to dc- and ac-measurements.

AB - MOS Model 20 is an advanced public-domain compact LDMOS model, to be used for circuit simulation of high-voltage IC-designs. By combining the description of the MOSFET channel region with that for the drift region of an LDMOS device, MOS Model 20 includes all specific high-voltage aspects into one model. This chapter presents the physical background of the model, the model parameter extraction strategy, and ends with the verification in comparison to dc- and ac-measurements.

U2 - 10.1007/978-90-481-3046-7_3

DO - 10.1007/978-90-481-3046-7_3

M3 - Chapter

SN - 978-90-481-3045-0

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EP - 93

BT - Power/HVMOS Devices Compact Modeling

A2 - Grabinski, W.

A2 - Gneiting, T.

PB - Springer

CY - Dordrecht

ER -

MM20 HVMOS Model : a surface-potential-based LDMOS model for circuit simulation (Chapter 3)

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