MM20 HVMOS Model : a surface-potential-based LDMOS model for circuit simulation (Chapter 3)

A.C.T. Aarts, A. Tajic

Research output: Chapter in Book/Report/Conference proceedingChapterAcademic

2 Citations (Scopus)

Abstract

MOS Model 20 is an advanced public-domain compact LDMOS model, to be used for circuit simulation of high-voltage IC-designs. By combining the description of the MOSFET channel region with that for the drift region of an LDMOS device, MOS Model 20 includes all specific high-voltage aspects into one model. This chapter presents the physical background of the model, the model parameter extraction strategy, and ends with the verification in comparison to dc- and ac-measurements.
Original languageEnglish
Title of host publicationPower/HVMOS Devices Compact Modeling
EditorsW. Grabinski, T. Gneiting
Place of PublicationDordrecht
PublisherSpringer
Pages65-93
ISBN (Print)978-90-481-3045-0
DOIs
Publication statusPublished - 2010

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