TY - CHAP
T1 - mm-Wave Monolithic Integrated Sensor Nodes
AU - Gao, Hao
AU - Matters-Kammerer, Marion
AU - Milosevic, Dusan
AU - Baltus, Peter G.M.
N1 - Publisher Copyright:
© 2018, Springer International Publishing AG.
PY - 2018
Y1 - 2018
N2 - This chapter presents the analysis, implementation, and measurement of two fully integrated mm-wave temperature sensor nodes with on-chip antennas. These two sensor nodes provide two solutions for integrating a sensor node with on-chip antenna(s). The first solution contains two on-chip antennas, one for Tx and one for Rx, in which Tx/Rx have separate antennas. The second solution is a one on-chip antenna solution, in which the on-chip antenna is reused by Tx/Rx through an RF switch. These sensor nodes are implemented in 65 nm CMOS technology. The first sensor node contains a monopole antenna at 71 GHz for RF power harvesting, a storage capacitor array, an End-of-Burst monitor, a temperature sensor, and an ultra-low-power transmitter at 79 GHz. At 71 GHz, the RF to DC converter achieves a power conversion efficiency of 8% for 5 dBm input power. The second sensor node contains an integrated antenna, an RF switch, an on-chip wireless power receiver, and a temperature-correlated ultra-low-power transmitter. It measures only 1.83 mm2 in 65 nm CMOS and weighs 1.6 mg. With the on-chip 30/65 GHz dual-frequency antenna and a three-stage inductor-peaked rectifier, the node can be wirelessly charged to 1.2 V. The output frequency of the temperature-correlated transmitter varies from 78.92 to 78.98 GHz, with a slope of 1.4 MHz/∘C.
AB - This chapter presents the analysis, implementation, and measurement of two fully integrated mm-wave temperature sensor nodes with on-chip antennas. These two sensor nodes provide two solutions for integrating a sensor node with on-chip antenna(s). The first solution contains two on-chip antennas, one for Tx and one for Rx, in which Tx/Rx have separate antennas. The second solution is a one on-chip antenna solution, in which the on-chip antenna is reused by Tx/Rx through an RF switch. These sensor nodes are implemented in 65 nm CMOS technology. The first sensor node contains a monopole antenna at 71 GHz for RF power harvesting, a storage capacitor array, an End-of-Burst monitor, a temperature sensor, and an ultra-low-power transmitter at 79 GHz. At 71 GHz, the RF to DC converter achieves a power conversion efficiency of 8% for 5 dBm input power. The second sensor node contains an integrated antenna, an RF switch, an on-chip wireless power receiver, and a temperature-correlated ultra-low-power transmitter. It measures only 1.83 mm2 in 65 nm CMOS and weighs 1.6 mg. With the on-chip 30/65 GHz dual-frequency antenna and a three-stage inductor-peaked rectifier, the node can be wirelessly charged to 1.2 V. The output frequency of the temperature-correlated transmitter varies from 78.92 to 78.98 GHz, with a slope of 1.4 MHz/∘C.
UR - http://www.scopus.com/inward/record.url?scp=85103983153&partnerID=8YFLogxK
U2 - 10.1007/978-3-319-72980-0_6
DO - 10.1007/978-3-319-72980-0_6
M3 - Chapter
AN - SCOPUS:85103983153
SN - 978-3-319-89226-9
SN - 978-3-319-72979-4
T3 - Analog Circuits and Signal Processing
SP - 59
EP - 78
BT - Batteryless mm-Wave Wireless Sensors
PB - Springer
CY - Cham
ER -