Mixed mode bending test for interfacial adhesion in semiconductor applications

J. Thijsse, W.D. Driel, van, M.A.J. Gils, van, O. Sluis, van der

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Currently, prediction of interface strength is typically done using the critical energy release rate. Interface strength, however, is heavily dependent on mode mixity. Accurately predicting delamination therefore requires a material model that includes the mode dependency of interface strength. A novel test setup is designed which allows mixed mode delamination testing. The setup is a stabilized version of the mixed mode bending test previously described by Reeder and Crews (1990; 1991). It allows for the measurement of stable crack growth over the full range of mode mixities, using a single specimen design. The crack length, necessary for calculation of the energy release rate, is obtained from an analytical model. Crack length and displacement data are used in a finite element model containing a crack tip to calculate the mode mixity
Original languageEnglish
Title of host publicationProceedings of the 56th Electronic Components and Technology Conference (ECTC 2006), May 30 - June 2, 2006, San Diego, California, USA
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1882-1886
ISBN (Print)1-4244-0152-6
DOIs
Publication statusPublished - 2006

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