Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

Lorenzo Ceccarelli (Corresponding author), Ramchandra M. Kotecha, Amir Sajjad Bahman, Francesco Iannuzzo, Homer Alan Mantooth

Research output: Contribution to journalArticleAcademicpeer-review

74 Citations (Scopus)

Abstract

The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2-kV all-SiC power module used in a photovoltaic inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically, and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.

Original languageEnglish
Article number8616890
Pages (from-to)9698-9708
Number of pages11
JournalIEEE Transactions on Power Electronics
Volume34
Issue number10
DOIs
Publication statusPublished - Oct 2019
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received June 27, 2018; revised September 24, 2018 and December 14, 2018; accepted January 13, 2019. Date of publication January 17, 2019; date of current version June 28, 2019. This work was supported by the Advanced Power Electronic Technology and Tools (APETT) project at the Department of Energy Technology of Aalborg University. Recommended for publication by Associate Editor K. Ngo. (Corresponding author: Lorenzo Ceccarelli.) L. Ceccarelli, A. S. Bahman, and F. Iannuzzo are with the Department of Energy Technology, Aalborg University 9220, Aalborg Denmark (e-mail:, [email protected]; [email protected]; [email protected]).

Funding Information:
The authors would like to thank the MSCAD research group at the University of Arkansas, Fayetteville, AR, USA, the Advanced Power Electronics Technology and Tools project at Aalborg University, Aalborg, Denmark, and the Innovation Fund Denmark for their contribution and support in this paper.

Publisher Copyright:
© 1986-2012 IEEE.

Funding

Manuscript received June 27, 2018; revised September 24, 2018 and December 14, 2018; accepted January 13, 2019. Date of publication January 17, 2019; date of current version June 28, 2019. This work was supported by the Advanced Power Electronic Technology and Tools (APETT) project at the Department of Energy Technology of Aalborg University. Recommended for publication by Associate Editor K. Ngo. (Corresponding author: Lorenzo Ceccarelli.) L. Ceccarelli, A. S. Bahman, and F. Iannuzzo are with the Department of Energy Technology, Aalborg University 9220, Aalborg Denmark (e-mail:, [email protected]; [email protected]; [email protected]). The authors would like to thank the MSCAD research group at the University of Arkansas, Fayetteville, AR, USA, the Advanced Power Electronics Technology and Tools project at Aalborg University, Aalborg, Denmark, and the Innovation Fund Denmark for their contribution and support in this paper.

Keywords

  • Electrothermal simulation
  • Multichip modules
  • Power MOSFETs
  • Predictive models
  • Reliability
  • Silicon carbide

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