Minimizing voltage loss in wide-bandgap perovskites for tandem solar cells

Manoj Jaysankar; Benedito A.L. Raul; Joao Bastos; Claire Burgess; Christ Weijtens; Mariadriana Creatore; Tom Aernouts; Yinghuan Kuang; Robert Gehlhaar; Afshin Hadipour; Jef Poortmans

doi:10.1021/acsenergylett.8b02179

Minimizing voltage loss in wide-bandgap perovskites for tandem solar cells

Manoj Jaysankar (Corresponding author), Benedito A.L. Raul, Joao Bastos, Claire Burgess, Christ Weijtens, Mariadriana Creatore, Tom Aernouts, Yinghuan Kuang, Robert Gehlhaar, Afshin Hadipour, Jef Poortmans

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Abstract

Perovskites with bandgaps between 1.7 and 1.8 eV are optimal for tandem configurations with crystalline silicon (c-Si) because they facilitate efficient harvest of solar energy. In that respect, achieving a high open-circuit voltage (V_OC) in such wide-bandgap perovskite solar cells is crucial for a high overall power conversion efficiency (PCE). Here, we provide key insights into the factors affecting the V_OC in wide-bandgap perovskite solar cells. We show that the influence of the hole transport layer (HTL) on V_OC is not simply through its ionization potential but mainly through the quality of the perovskite-HTL interface. With effective interface passivation, we demonstrate perovskite solar cells with a bandgap of 1.72 eV that exhibit a V_OC of 1.22 V. Furthermore, by combining the high-V_OC perovskite solar cell with a c-Si solar cell, we demonstrate a perovskite-Si four-terminal tandem solar cell with a PCE of 27.1%, exceeding the record PCE of single-junction Si solar cells.

Original language	English
Pages (from-to)	259-264
Number of pages	6
Journal	ACS Energy Letters
Volume	4
Issue number	1
DOIs	https://doi.org/10.1021/acsenergylett.8b02179
Publication status	Published - 11 Jan 2019

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abstract = "Perovskites with bandgaps between 1.7 and 1.8 eV are optimal for tandem configurations with crystalline silicon (c-Si) because they facilitate efficient harvest of solar energy. In that respect, achieving a high open-circuit voltage (VOC) in such wide-bandgap perovskite solar cells is crucial for a high overall power conversion efficiency (PCE). Here, we provide key insights into the factors affecting the VOC in wide-bandgap perovskite solar cells. We show that the influence of the hole transport layer (HTL) on VOC is not simply through its ionization potential but mainly through the quality of the perovskite-HTL interface. With effective interface passivation, we demonstrate perovskite solar cells with a bandgap of 1.72 eV that exhibit a VOC of 1.22 V. Furthermore, by combining the high-VOC perovskite solar cell with a c-Si solar cell, we demonstrate a perovskite-Si four-terminal tandem solar cell with a PCE of 27.1%, exceeding the record PCE of single-junction Si solar cells.",

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AU - Jaysankar, Manoj

AU - Raul, Benedito A.L.

AU - Bastos, Joao

AU - Burgess, Claire

AU - Weijtens, Christ

AU - Creatore, Mariadriana

AU - Aernouts, Tom

AU - Kuang, Yinghuan

AU - Gehlhaar, Robert

AU - Hadipour, Afshin

AU - Poortmans, Jef

PY - 2019/1/11

Y1 - 2019/1/11

N2 - Perovskites with bandgaps between 1.7 and 1.8 eV are optimal for tandem configurations with crystalline silicon (c-Si) because they facilitate efficient harvest of solar energy. In that respect, achieving a high open-circuit voltage (VOC) in such wide-bandgap perovskite solar cells is crucial for a high overall power conversion efficiency (PCE). Here, we provide key insights into the factors affecting the VOC in wide-bandgap perovskite solar cells. We show that the influence of the hole transport layer (HTL) on VOC is not simply through its ionization potential but mainly through the quality of the perovskite-HTL interface. With effective interface passivation, we demonstrate perovskite solar cells with a bandgap of 1.72 eV that exhibit a VOC of 1.22 V. Furthermore, by combining the high-VOC perovskite solar cell with a c-Si solar cell, we demonstrate a perovskite-Si four-terminal tandem solar cell with a PCE of 27.1%, exceeding the record PCE of single-junction Si solar cells.

AB - Perovskites with bandgaps between 1.7 and 1.8 eV are optimal for tandem configurations with crystalline silicon (c-Si) because they facilitate efficient harvest of solar energy. In that respect, achieving a high open-circuit voltage (VOC) in such wide-bandgap perovskite solar cells is crucial for a high overall power conversion efficiency (PCE). Here, we provide key insights into the factors affecting the VOC in wide-bandgap perovskite solar cells. We show that the influence of the hole transport layer (HTL) on VOC is not simply through its ionization potential but mainly through the quality of the perovskite-HTL interface. With effective interface passivation, we demonstrate perovskite solar cells with a bandgap of 1.72 eV that exhibit a VOC of 1.22 V. Furthermore, by combining the high-VOC perovskite solar cell with a c-Si solar cell, we demonstrate a perovskite-Si four-terminal tandem solar cell with a PCE of 27.1%, exceeding the record PCE of single-junction Si solar cells.

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Minimizing voltage loss in wide-bandgap perovskites for tandem solar cells

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