Miniarutized quad-band front-end module for GSM using Si BiCMOS and passive integration technologies

A.J.M. Graauw, de, A. Bezooijen, van, C. Chanlo, A. Dekker, J. Dijkhuis, S. Pramm, H.J. Dolle, ten

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon BiCMOS RF power amplifier (PA) chip, a BiCMOS die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrate. All passives are integrated. Partitioning of passives is optimized to achieve minimum size (6times6times1 mm3) and low cost at acceptable performance. A power added efficiency (PAE) of 35% is demonstrated in the low band (870 MHz) for an output power of 32 dBm with the second harmonic (H2) below -40 dBm and third harmonic (H3) below -45 dBm
Original languageEnglish
Title of host publicationProceedings of IEEE 2006 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), 08-10 October 2006, Maastricht, The Netherlands
DOIs
Publication statusPublished - 2006
Event2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands - Maastricht, Netherlands
Duration: 8 Oct 200610 Oct 2006

Conference

Conference2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands
Abbreviated titleBCTM 2006
CountryNetherlands
CityMaastricht
Period8/10/0610/10/06

Fingerprint Dive into the research topics of 'Miniarutized quad-band front-end module for GSM using Si BiCMOS and passive integration technologies'. Together they form a unique fingerprint.

  • Cite this

    Graauw, de, A. J. M., Bezooijen, van, A., Chanlo, C., Dekker, A., Dijkhuis, J., Pramm, S., & Dolle, ten, H. J. (2006). Miniarutized quad-band front-end module for GSM using Si BiCMOS and passive integration technologies. In Proceedings of IEEE 2006 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), 08-10 October 2006, Maastricht, The Netherlands https://doi.org/10.1109/BIPOL.2006.311136