Abstract
The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon BiCMOS RF power amplifier (PA) chip, a BiCMOS die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrate. All passives are integrated. Partitioning of passives is optimized to achieve minimum size (6times6times1 mm3) and low cost at acceptable performance. A power added efficiency (PAE) of 35% is demonstrated in the low band (870 MHz) for an output power of 32 dBm with the second harmonic (H2) below -40 dBm and third harmonic (H3) below -45 dBm
Original language | English |
---|---|
Title of host publication | Proceedings of IEEE 2006 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), 08-10 October 2006, Maastricht, The Netherlands |
DOIs | |
Publication status | Published - 2006 |
Event | 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands - Maastricht, Netherlands Duration: 8 Oct 2006 → 10 Oct 2006 |
Conference
Conference | 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands |
---|---|
Abbreviated title | BCTM 2006 |
Country/Territory | Netherlands |
City | Maastricht |
Period | 8/10/06 → 10/10/06 |