Theoretical analysis and numerical simulations on the microwave properties of a III-V integrated phase shifter are presented and compared with experimental results. A 3Delectro-magnetic model of the phase shifter is used to study the effect of geometrical and material parameter changes on the modulator’s transmission line parameters including its bias voltage dependency. The model predictions match well with measurements on phase shifter structures fabricated in a generic integration process and can be used to analyze electrical crosstalk between modulators in high-capacity WDM transmitter chips.
|Title of host publication||Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Eindhoven, The Netherlands|
|Editors||X.J.M. Leijtens, D. Pustakhod|
|Place of Publication||Eindhoven|
|Publisher||Eindhoven University of Technology|
|Publication status||Published - 2013|