Microwave modeling and analysis of an InP based phase shifter from a generic foundry process

W. Yao, G. Gilardi, M.K. Smit, M.J. Wale

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Abstract

Theoretical analysis and numerical simulations on the microwave properties of a III-V integrated phase shifter are presented and compared with experimental results. A 3Delectro-magnetic model of the phase shifter is used to study the effect of geometrical and material parameter changes on the modulator’s transmission line parameters including its bias voltage dependency. The model predictions match well with measurements on phase shifter structures fabricated in a generic integration process and can be used to analyze electrical crosstalk between modulators in high-capacity WDM transmitter chips.
Original languageEnglish
Title of host publicationProceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Eindhoven, The Netherlands
EditorsX.J.M. Leijtens, D. Pustakhod
Place of PublicationEindhoven
PublisherEindhoven University of Technology
Pages151-154
ISBN (Print)978-90-386-3512-5
Publication statusPublished - 2013

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