Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

E. Selcuk, G.J. Hamhuis, R. Nötzel

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications.
Original languageEnglish
Pages (from-to)535-536
Number of pages2
JournalAIP Conference Proceedings
Volume1199
DOIs
Publication statusPublished - 2010

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