Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

E. Selcuk; G.J. Hamhuis; R. Nötzel

doi:10.1063/1.3295544

Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

E. Selcuk, G.J. Hamhuis, R. Nötzel

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications.

Original language	English
Pages (from-to)	535-536
Number of pages	2
Journal	AIP Conference Proceedings
Volume	1199
DOIs	https://doi.org/10.1063/1.3295544
Publication status	Published - 2010

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title = "Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B",

abstract = "Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications.",

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AU - Selcuk, E.

AU - Hamhuis, G.J.

AU - Nötzel, R.

PY - 2010

Y1 - 2010

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AB - Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity sensor applications.

U2 - 10.1063/1.3295544

DO - 10.1063/1.3295544

M3 - Article

SN - 0094-243X

VL - 1199

SP - 535

EP - 536

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

ER -

Micro‐photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B

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