Micromagnetic and magneto-transport simulations of nanodevices based on MgO tunnel junctions for memory and sensing applications

Z. Hou; A.V. Silva; D.C. Leitao; R. Ferreira; S. Cardoso; P.P. Freitas

doi:10.1016/j.physb.2013.09.039

Micromagnetic and magneto-transport simulations of nanodevices based on MgO tunnel junctions for memory and sensing applications

Z. Hou, A.V. Silva, D.C. Leitao (Corresponding author), R. Ferreira, S. Cardoso, P.P. Freitas

Research output: Contribution to journal › Article › Academic › peer-review

7 Citations (Scopus)

Abstract

This work provides a systematic simulation study of magnetic tunnel junction (MTJ) nanodevices behavior, consisting of a multilayered stack incorporating an in-plane CoFeB free layer and a synthetic antiferromagnetic CoFe-based pinned layer, and including exchange and interlayer couplings. A finite element tool is used to simulate both the magnetic and magneto-transport behaviors of these MTJ nanopillars with distinct geometries, namely circles with diameter ranging from 20 nm up to 250 nm and ellipses with aspect ratios of 1/2, 1/3 and 1/5, corresponding to sizes from 20×40 nm² up to 50×250 nm². This study envisages two clear applications for nanopillars: memory and sensor devices. We address the impact of the nanopillar size on the coercivity and saturation field, as figures of merit for device performance. In particular a competitive sensitivity of 0.15%/Oe is envisaged for sensors with a size of 50×100 nm². Our results provide a validation of this simulation method as a expedite tool to assist the nanofabrication process.

Original language	English
Pages (from-to)	163-167
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	435
DOIs	https://doi.org/10.1016/j.physb.2013.09.039
Publication status	Published - 15 Feb 2014
Externally published	Yes

Bibliographical note

Funding Information:
This work was partially supported by FCT projects PTDC/CTM-NAN/112672/2009 , PTDC/CTM-NAN/110793/2009 , PTDC/CTM-NAN/118236/2010 . ZH acknowledges IMAGIC-EU-FP7-ICT-288381 . AVS and DCL thank FCT for grants SFRH/BD/74975/2010 and SFRH/BPD/72359/2010 , respectively. INL acknowledges partial funding from ON2 project from PO Norte. INESC-MN acknowledges FCT funding through the IN Associated Laboratory.

Funding

This work was partially supported by FCT projects PTDC/CTM-NAN/112672/2009 , PTDC/CTM-NAN/110793/2009 , PTDC/CTM-NAN/118236/2010 . ZH acknowledges IMAGIC-EU-FP7-ICT-288381 . AVS and DCL thank FCT for grants SFRH/BD/74975/2010 and SFRH/BPD/72359/2010 , respectively. INL acknowledges partial funding from ON2 project from PO Norte. INESC-MN acknowledges FCT funding through the IN Associated Laboratory .

Keywords

Magnetic tunnel junction
Magneto-transport
Micromagnetic simulations

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10.1016/j.physb.2013.09.039

Cite this

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title = "Micromagnetic and magneto-transport simulations of nanodevices based on MgO tunnel junctions for memory and sensing applications",

abstract = "This work provides a systematic simulation study of magnetic tunnel junction (MTJ) nanodevices behavior, consisting of a multilayered stack incorporating an in-plane CoFeB free layer and a synthetic antiferromagnetic CoFe-based pinned layer, and including exchange and interlayer couplings. A finite element tool is used to simulate both the magnetic and magneto-transport behaviors of these MTJ nanopillars with distinct geometries, namely circles with diameter ranging from 20 nm up to 250 nm and ellipses with aspect ratios of 1/2, 1/3 and 1/5, corresponding to sizes from 20×40 nm2 up to 50×250 nm2. This study envisages two clear applications for nanopillars: memory and sensor devices. We address the impact of the nanopillar size on the coercivity and saturation field, as figures of merit for device performance. In particular a competitive sensitivity of 0.15%/Oe is envisaged for sensors with a size of 50×100 nm2. Our results provide a validation of this simulation method as a expedite tool to assist the nanofabrication process.",

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author = "Z. Hou and A.V. Silva and D.C. Leitao and R. Ferreira and S. Cardoso and P.P. Freitas",

note = "Funding Information: This work was partially supported by FCT projects PTDC/CTM-NAN/112672/2009 , PTDC/CTM-NAN/110793/2009 , PTDC/CTM-NAN/118236/2010 . ZH acknowledges IMAGIC-EU-FP7-ICT-288381 . AVS and DCL thank FCT for grants SFRH/BD/74975/2010 and SFRH/BPD/72359/2010 , respectively. INL acknowledges partial funding from ON2 project from PO Norte. INESC-MN acknowledges FCT funding through the IN Associated Laboratory.",

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AU - Hou, Z.

AU - Silva, A.V.

AU - Leitao, D.C.

AU - Ferreira, R.

AU - Cardoso, S.

AU - Freitas, P.P.

N1 - Funding Information: This work was partially supported by FCT projects PTDC/CTM-NAN/112672/2009 , PTDC/CTM-NAN/110793/2009 , PTDC/CTM-NAN/118236/2010 . ZH acknowledges IMAGIC-EU-FP7-ICT-288381 . AVS and DCL thank FCT for grants SFRH/BD/74975/2010 and SFRH/BPD/72359/2010 , respectively. INL acknowledges partial funding from ON2 project from PO Norte. INESC-MN acknowledges FCT funding through the IN Associated Laboratory.

PY - 2014/2/15

Y1 - 2014/2/15

N2 - This work provides a systematic simulation study of magnetic tunnel junction (MTJ) nanodevices behavior, consisting of a multilayered stack incorporating an in-plane CoFeB free layer and a synthetic antiferromagnetic CoFe-based pinned layer, and including exchange and interlayer couplings. A finite element tool is used to simulate both the magnetic and magneto-transport behaviors of these MTJ nanopillars with distinct geometries, namely circles with diameter ranging from 20 nm up to 250 nm and ellipses with aspect ratios of 1/2, 1/3 and 1/5, corresponding to sizes from 20×40 nm2 up to 50×250 nm2. This study envisages two clear applications for nanopillars: memory and sensor devices. We address the impact of the nanopillar size on the coercivity and saturation field, as figures of merit for device performance. In particular a competitive sensitivity of 0.15%/Oe is envisaged for sensors with a size of 50×100 nm2. Our results provide a validation of this simulation method as a expedite tool to assist the nanofabrication process.

AB - This work provides a systematic simulation study of magnetic tunnel junction (MTJ) nanodevices behavior, consisting of a multilayered stack incorporating an in-plane CoFeB free layer and a synthetic antiferromagnetic CoFe-based pinned layer, and including exchange and interlayer couplings. A finite element tool is used to simulate both the magnetic and magneto-transport behaviors of these MTJ nanopillars with distinct geometries, namely circles with diameter ranging from 20 nm up to 250 nm and ellipses with aspect ratios of 1/2, 1/3 and 1/5, corresponding to sizes from 20×40 nm2 up to 50×250 nm2. This study envisages two clear applications for nanopillars: memory and sensor devices. We address the impact of the nanopillar size on the coercivity and saturation field, as figures of merit for device performance. In particular a competitive sensitivity of 0.15%/Oe is envisaged for sensors with a size of 50×100 nm2. Our results provide a validation of this simulation method as a expedite tool to assist the nanofabrication process.

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KW - Magneto-transport

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Micromagnetic and magneto-transport simulations of nanodevices based on MgO tunnel junctions for memory and sensing applications

Abstract

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Keywords

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