Microcrystalline and micromorph device improvements through combined plasma and material characterization techniques

G. Bugnon, A. Feltrin, R. Bartlome, B. Strahm, A.C. Bronneberg, G. Parascandolo, C. Ballif

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Abstract

Hydrogenated microcrystalline silicon (µc-Si:H) growth by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is studied in an industrial-type parallel plate KAI reactor. Combined plasma and material characterization techniques allow to assess critical deposition parameters for the fabrication of high quality material. A relation between low intrinsic stress of the deposited i-layer and better performing solar cell devices is identified. Significant solar cell device improvements were achieved based on these findings: high open circuit voltages above 520 mV and fill factors above 74% were obtained for 1 µm thick µc-Si:H single junction cells and a 1.2 cm2 micromorph device with 12.3% initial (Voc=1.33 V, FF=72.4%, Jsc=12.8 mA cm-2) and above 10.0% stabilized efficiencies.
Original languageEnglish
Pages (from-to)134-137
JournalSolar Energy Materials and Solar Cells
Volume95
Issue number1
DOIs
Publication statusPublished - 2011

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