Method of manufacturing a display device

H. Lifka; F. Roozeboom; R.J.G. Elfrink

Method of manufacturing a display device

H. Lifka (Inventor), F. Roozeboom (Inventor), R.J.G. Elfrink (Inventor)

Research output: Patent › Patent publication

Abstract

ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory+identification).

Original language	English
Patent number	CN1419711
IPC	H01L 27/ 32 A N
Priority date	26/01/01
Publication status	Published - 21 May 2003

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title = "Method of manufacturing a display device",

abstract = "ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory+identification).",

author = "H. Lifka and F. Roozeboom and R.J.G. Elfrink",

year = "2003",

month = may,

day = "21",

language = "English",

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T1 - Method of manufacturing a display device

AU - Lifka, H.

AU - Roozeboom, F.

AU - Elfrink, R.J.G.

PY - 2003/5/21

Y1 - 2003/5/21

N2 - ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory+identification).

AB - ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory+identification).

M3 - Patent publication

M1 - CN1419711

ER -

Method of manufacturing a display device

Abstract

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