Method for forming microscopic structures on a substrate

A.F. Jong, de; J.J.L. Mulders; W.M.M. Kessels; A.J.M. Mackus

Method for forming microscopic structures on a substrate

A.F. Jong, de (Inventor), J.J.L. Mulders (Inventor), W.M.M. Kessels (Inventor), A.J.M. Mackus (Inventor)

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Abstract

The invention relates to a method for forming microscopic structures. By scanning a focused particle beam over a substrate in the presence of a precursor fluid, a patterned seed layer is formed. By now growing this layer with Atomic Layer Deposition or Chemical Vapour Deposition, a high quality layer can be grown. An advantage of this method is that forming the seed layer takes relatively little time, as only a very thin layer needs to be deposited.

Original language	English
Patent number	US2010159370
Publication status	Published - 24 Jun 2010

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title = "Method for forming microscopic structures on a substrate",

abstract = "The invention relates to a method for forming microscopic structures. By scanning a focused particle beam over a substrate in the presence of a precursor fluid, a patterned seed layer is formed. By now growing this layer with Atomic Layer Deposition or Chemical Vapour Deposition, a high quality layer can be grown. An advantage of this method is that forming the seed layer takes relatively little time, as only a very thin layer needs to be deposited.",

author = "{Jong, de}, A.F. and J.J.L. Mulders and W.M.M. Kessels and A.J.M. Mackus",

year = "2010",

month = jun,

day = "24",

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T1 - Method for forming microscopic structures on a substrate

AU - Jong, de, A.F.

AU - Mulders, J.J.L.

AU - Kessels, W.M.M.

AU - Mackus, A.J.M.

PY - 2010/6/24

Y1 - 2010/6/24

N2 - The invention relates to a method for forming microscopic structures. By scanning a focused particle beam over a substrate in the presence of a precursor fluid, a patterned seed layer is formed. By now growing this layer with Atomic Layer Deposition or Chemical Vapour Deposition, a high quality layer can be grown. An advantage of this method is that forming the seed layer takes relatively little time, as only a very thin layer needs to be deposited.

AB - The invention relates to a method for forming microscopic structures. By scanning a focused particle beam over a substrate in the presence of a precursor fluid, a patterned seed layer is formed. By now growing this layer with Atomic Layer Deposition or Chemical Vapour Deposition, a high quality layer can be grown. An advantage of this method is that forming the seed layer takes relatively little time, as only a very thin layer needs to be deposited.

UR - http://v3.espacenet.com/publicationDetails/biblio?DB=EPODOC&adjacent=true&locale=nl_nl&FT=D&date=20100624&CC=US&NR=2010159370A1&KC=A1

M3 - Patent publication

M1 - US2010159370

ER -

Method for forming microscopic structures on a substrate

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