Abstract
Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
| Original language | English |
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| Patent number | US2018037994 |
| IPC | H01L 21/ 677 A I |
| Priority date | 12/10/17 |
| Publication status | Published - 8 Feb 2018 |