Method and apparatus for depositing atomic layers on a substrate

A.J.P.M. Vermeer; F. Roozeboom; J. van Deelen

Method and apparatus for depositing atomic layers on a substrate

A.J.P.M. Vermeer (Inventor)
, F. Roozeboom (Inventor)
, J. van Deelen (Inventor)

Plasma & Materials Processing

Research output: Patent › Patent publication

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Abstract

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Original language	English
Patent number	US9803280
IPC	C23C 16/ 52 A I
Priority date	21/03/16
Publication status	Published - 31 Oct 2017

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title = "Method and apparatus for depositing atomic layers on a substrate",

abstract = "Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.",

author = "A.J.P.M. Vermeer and F. Roozeboom and \{van Deelen\}, J.",

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T1 - Method and apparatus for depositing atomic layers on a substrate

AU - Vermeer, A.J.P.M.

AU - Roozeboom, F.

AU - van Deelen, J.

PY - 2017/10/31

Y1 - 2017/10/31

N2 - Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

AB - Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

M3 - Patent publication

M1 - US9803280

ER -

Method and apparatus for depositing atomic layers on a substrate

Abstract

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