Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS

B. Jacobs; M.C.J.C.M. Krämer; B. Straaten, van; J.J.M. Kwaspen; F. Karouta; A.P. Hek, de; R. Dijk, van; F.E. Vliet, van

Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS

B. Jacobs, M.C.J.C.M. Krämer, B. Straaten, van, J.J.M. Kwaspen, F. Karouta, A.P. Hek, de, R. Dijk, van, F.E. Vliet, van

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In this report two different aspects in the development of AlGaN/GaN power amplifiers will be discussed. In the first part of this paper we report on the optimization of the Ti/Al/Ni/Au metallization scheme on a doped AlGaN/GaN FET structure. By a systematic investigation we were able to reduce the contact resistance to 0.2 Ùmm (7.3x10-7Ùcm2). The Al/Ti thickness ratio for this contact was 6, which according to the Al-Ti binary phase diagram, does not result in excess Ti which should react with nitrogen in the AlGaN layer to render the surface heavily doped. Preliminary results on Schottky contacts indicate an improvement in the reverse leakage current if a RIE oxygen plasma in combination with a NH4OH dip is performed prior to metallization. Coplanar waveguides on AlN are discussed in the second part of this paper. These transmission lines can be used in AlGaN/GaN power amplifiers if no via-hole technology is available or if a hybrid solution is pursued. The signal line should have a large metal cross-sectional area (> 5 x 50 ìm2) in order to carry enough current in the output stage of an amplifier. It is shown that CPWs with large dimensions show non-quasi TEM behavior related to propagation of parallel plate modes.

Original language	English
Title of host publication	Microcrystalline and nanocrystalline semiconductors, 2000 (MRS Fall meeting 2000) November 27 - 30, 2000, Boston, Massachusetts, USA
Editors	P.M. Fauchet
Place of Publication	Warrendale, Pa
Publisher	Materials Research Society
Pages	G13.9-1/6
ISBN (Print)	1-558-99548-X
Publication status	Published - 2001
Event	2000 MRS Fall Meeting & Exhibit - Boston, United States Duration: 27 Nov 2000 → 1 Dec 2000 https://www.mrs.org/fall2000

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	639
ISSN (Print)	0272-9172

Conference

Conference	2000 MRS Fall Meeting & Exhibit
Country/Territory	United States
City	Boston
Period	27/11/00 → 1/12/00
Internet address	https://www.mrs.org/fall2000

Cite this

Jacobs, B., Krämer, M. C. J. C. M., Straaten, van, B., Kwaspen, J. J. M., Karouta, F., Hek, de, A. P., Dijk, van, R., & Vliet, van, F. E. (2001). Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS. In P. M. Fauchet (Ed.), Microcrystalline and nanocrystalline semiconductors, 2000 (MRS Fall meeting 2000) November 27 - 30, 2000, Boston, Massachusetts, USA (pp. G13.9-1/6). (Materials Research Society Symposium Proceedings; Vol. 639). Materials Research Society.

Jacobs, B. ; Krämer, M.C.J.C.M. ; Straaten, van, B. et al. / Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS. Microcrystalline and nanocrystalline semiconductors, 2000 (MRS Fall meeting 2000) November 27 - 30, 2000, Boston, Massachusetts, USA. editor / P.M. Fauchet. Warrendale, Pa : Materials Research Society, 2001. pp. G13.9-1/6 (Materials Research Society Symposium Proceedings).

@inproceedings{1fa2ce1cfe814145b00f7c5fc9f74e51,

title = "Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS",

abstract = "In this report two different aspects in the development of AlGaN/GaN power amplifiers will be discussed. In the first part of this paper we report on the optimization of the Ti/Al/Ni/Au metallization scheme on a doped AlGaN/GaN FET structure. By a systematic investigation we were able to reduce the contact resistance to 0.2 {\`U}mm (7.3x10-7{\`U}cm2). The Al/Ti thickness ratio for this contact was 6, which according to the Al-Ti binary phase diagram, does not result in excess Ti which should react with nitrogen in the AlGaN layer to render the surface heavily doped. Preliminary results on Schottky contacts indicate an improvement in the reverse leakage current if a RIE oxygen plasma in combination with a NH4OH dip is performed prior to metallization. Coplanar waveguides on AlN are discussed in the second part of this paper. These transmission lines can be used in AlGaN/GaN power amplifiers if no via-hole technology is available or if a hybrid solution is pursued. The signal line should have a large metal cross-sectional area (> 5 x 50 {\`i}m2) in order to carry enough current in the output stage of an amplifier. It is shown that CPWs with large dimensions show non-quasi TEM behavior related to propagation of parallel plate modes.",

author = "B. Jacobs and M.C.J.C.M. Kr{\"a}mer and {Straaten, van}, B. and J.J.M. Kwaspen and F. Karouta and {Hek, de}, A.P. and {Dijk, van}, R. and {Vliet, van}, F.E.",

year = "2001",

language = "English",

isbn = "1-558-99548-X",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "G13.9--1/6",

editor = "P.M. Fauchet",

booktitle = "Microcrystalline and nanocrystalline semiconductors, 2000 (MRS Fall meeting 2000) November 27 - 30, 2000, Boston, Massachusetts, USA",

address = "United States",

note = "2000 MRS Fall Meeting & Exhibit ; Conference date: 27-11-2000 Through 01-12-2000",

url = "https://www.mrs.org/fall2000",

}

Jacobs, B, Krämer, MCJCM, Straaten, van, B, Kwaspen, JJM, Karouta, F, Hek, de, AP, Dijk, van, R & Vliet, van, FE 2001, Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS. in PM Fauchet (ed.), Microcrystalline and nanocrystalline semiconductors, 2000 (MRS Fall meeting 2000) November 27 - 30, 2000, Boston, Massachusetts, USA. Materials Research Society Symposium Proceedings, vol. 639, Materials Research Society, Warrendale, Pa, pp. G13.9-1/6, 2000 MRS Fall Meeting & Exhibit, Boston, Massachusetts, United States, 27/11/00.

Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS. / Jacobs, B.; Krämer, M.C.J.C.M.; Straaten, van, B. et al.
Microcrystalline and nanocrystalline semiconductors, 2000 (MRS Fall meeting 2000) November 27 - 30, 2000, Boston, Massachusetts, USA. ed. / P.M. Fauchet. Warrendale, Pa: Materials Research Society, 2001. p. G13.9-1/6 (Materials Research Society Symposium Proceedings; Vol. 639).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS

AU - Jacobs, B.

AU - Krämer, M.C.J.C.M.

AU - Straaten, van, B.

AU - Kwaspen, J.J.M.

AU - Karouta, F.

AU - Hek, de, A.P.

AU - Dijk, van, R.

AU - Vliet, van, F.E.

PY - 2001

Y1 - 2001

N2 - In this report two different aspects in the development of AlGaN/GaN power amplifiers will be discussed. In the first part of this paper we report on the optimization of the Ti/Al/Ni/Au metallization scheme on a doped AlGaN/GaN FET structure. By a systematic investigation we were able to reduce the contact resistance to 0.2 Ùmm (7.3x10-7Ùcm2). The Al/Ti thickness ratio for this contact was 6, which according to the Al-Ti binary phase diagram, does not result in excess Ti which should react with nitrogen in the AlGaN layer to render the surface heavily doped. Preliminary results on Schottky contacts indicate an improvement in the reverse leakage current if a RIE oxygen plasma in combination with a NH4OH dip is performed prior to metallization. Coplanar waveguides on AlN are discussed in the second part of this paper. These transmission lines can be used in AlGaN/GaN power amplifiers if no via-hole technology is available or if a hybrid solution is pursued. The signal line should have a large metal cross-sectional area (> 5 x 50 ìm2) in order to carry enough current in the output stage of an amplifier. It is shown that CPWs with large dimensions show non-quasi TEM behavior related to propagation of parallel plate modes.

AB - In this report two different aspects in the development of AlGaN/GaN power amplifiers will be discussed. In the first part of this paper we report on the optimization of the Ti/Al/Ni/Au metallization scheme on a doped AlGaN/GaN FET structure. By a systematic investigation we were able to reduce the contact resistance to 0.2 Ùmm (7.3x10-7Ùcm2). The Al/Ti thickness ratio for this contact was 6, which according to the Al-Ti binary phase diagram, does not result in excess Ti which should react with nitrogen in the AlGaN layer to render the surface heavily doped. Preliminary results on Schottky contacts indicate an improvement in the reverse leakage current if a RIE oxygen plasma in combination with a NH4OH dip is performed prior to metallization. Coplanar waveguides on AlN are discussed in the second part of this paper. These transmission lines can be used in AlGaN/GaN power amplifiers if no via-hole technology is available or if a hybrid solution is pursued. The signal line should have a large metal cross-sectional area (> 5 x 50 ìm2) in order to carry enough current in the output stage of an amplifier. It is shown that CPWs with large dimensions show non-quasi TEM behavior related to propagation of parallel plate modes.

M3 - Conference contribution

SN - 1-558-99548-X

T3 - Materials Research Society Symposium Proceedings

SP - G13.9-1/6

BT - Microcrystalline and nanocrystalline semiconductors, 2000 (MRS Fall meeting 2000) November 27 - 30, 2000, Boston, Massachusetts, USA

A2 - Fauchet, P.M.

PB - Materials Research Society

CY - Warrendale, Pa

T2 - 2000 MRS Fall Meeting & Exhibit

Y2 - 27 November 2000 through 1 December 2000

ER -

Jacobs B, Krämer MCJCM, Straaten, van B, Kwaspen JJM, Karouta F, Hek, de AP et al. Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS. In Fauchet PM, editor, Microcrystalline and nanocrystalline semiconductors, 2000 (MRS Fall meeting 2000) November 27 - 30, 2000, Boston, Massachusetts, USA. Warrendale, Pa: Materials Research Society. 2001. p. G13.9-1/6. (Materials Research Society Symposium Proceedings).

Metal-semiconductor contacts and CPW MMIC issues for AIGaN/GaN FETS

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