Metal oxide gate electrodes for advanced CMOS technology

K. Fröhlich, K. Hušeková, Z. Oszi, J.C. Hooker, M. Fanciulli, C. Wiemer, A. Dimoulas, G. Vellianitis, F. Roozeboom

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)


We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.

Original languageEnglish
Pages (from-to)31-34
Number of pages4
JournalAnnalen der Physik
Issue number1-2
Publication statusPublished - 1 Jan 2004
Externally publishedYes


  • CMOS
  • Conducting oxides


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