Metal oxide gate electrodes for advanced CMOS technology

K. Fröhlich; K. Hušeková; Z. Oszi; J.C. Hooker; M. Fanciulli; C. Wiemer; A. Dimoulas; G. Vellianitis; F. Roozeboom

doi:10.1002/andp.200310038

Metal oxide gate electrodes for advanced CMOS technology

K. Fröhlich, K. Hušeková, Z. Oszi, J.C. Hooker, M. Fanciulli, C. Wiemer, A. Dimoulas, G. Vellianitis, F. Roozeboom

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

Abstract

We have prepared RuO₂ and SrRuO₃ thin films for application as gate electrodes in CMOS technology. RuO₂ and SrRuO₃ films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO₂ films decompose in reducing atmosphere. Extracted work function values for RuO₂ electrode are around 5.1 eV, confirming that RuO₂ is a suitable candidate for pMOS gate electrode application.

Original language	English
Pages (from-to)	31-34
Number of pages	4
Journal	Annalen der Physik
Volume	13
Issue number	1-2
DOIs	https://doi.org/10.1002/andp.200310038
Publication status	Published - 1 Jan 2004
Externally published	Yes

Keywords

CMOS
Conducting oxides
MOCVD

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10.1002/andp.200310038

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title = "Metal oxide gate electrodes for advanced CMOS technology",

abstract = "We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.",

keywords = "CMOS, Conducting oxides, MOCVD",

author = "K. Fr{\"o}hlich and K. Hu{\v s}ekov{\'a} and Z. Oszi and J.C. Hooker and M. Fanciulli and C. Wiemer and A. Dimoulas and G. Vellianitis and F. Roozeboom",

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T1 - Metal oxide gate electrodes for advanced CMOS technology

AU - Fröhlich, K.

AU - Hušeková, K.

AU - Oszi, Z.

AU - Hooker, J.C.

AU - Fanciulli, M.

AU - Wiemer, C.

AU - Dimoulas, A.

AU - Vellianitis, G.

AU - Roozeboom, F.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.

AB - We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.

KW - CMOS

KW - Conducting oxides

KW - MOCVD

UR - http://www.scopus.com/inward/record.url?scp=1242329382&partnerID=8YFLogxK

U2 - 10.1002/andp.200310038

DO - 10.1002/andp.200310038

M3 - Article

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EP - 34

JO - Annalen der Physik

JF - Annalen der Physik

SN - 0003-3804

IS - 1-2

ER -

Metal oxide gate electrodes for advanced CMOS technology

Abstract

Keywords

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