Metal free graphene synthesis on insulating or semiconducting substrates

Ž. Tomović; Nils-Eike Weber; Axel Binder; Norbert Wagner

Metal free graphene synthesis on insulating or semiconducting substrates

Ž. Tomović (Inventor)
, Nils-Eike Weber (Inventor)
, Axel Binder (Inventor)
, Norbert Wagner (Inventor)

ICMS Core member

Research output: Patent › Patent publication

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Abstract

The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate.

Original language	English
Patent number	WO2017/064113Al
Priority date	15/10/15
Filing date	12/10/16
Publication status	Published - 20 Apr 2017

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16. WO2017064113-PAMPH-20170420-5524

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title = "Metal free graphene synthesis on insulating or semiconducting substrates",

abstract = "The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate.",

author = "{\v Z}. Tomovi{\'c} and Nils-Eike Weber and Axel Binder and Norbert Wagner",

year = "2017",

month = apr,

day = "20",

language = "English",

type = "Patent",

note = "WO2017/064113Al",

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TY - PAT

T1 - Metal free graphene synthesis on insulating or semiconducting substrates

AU - Tomović, Ž.

AU - Weber, Nils-Eike

AU - Binder, Axel

AU - Wagner, Norbert

PY - 2017/4/20

Y1 - 2017/4/20

N2 - The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate.

AB - The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate.

UR - https://patentscope.wipo.int/search/en/detail.jsf?docId=WO2017064113

M3 - Patent publication

M1 - WO2017/064113Al

Y2 - 2016/10/12

ER -

Metal free graphene synthesis on insulating or semiconducting substrates

Abstract

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