Abstract
The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate.
| Original language | English |
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| Patent number | WO2017/064113Al |
| Priority date | 15/10/15 |
| Filing date | 12/10/16 |
| Publication status | Published - 20 Apr 2017 |