MEMS-based reconfigurable multi-band BiCMOS power amplifier

A.J.M. Graauw, de; P.G. Steeneken; C. Chanlo; S. Pramm; A. Bezooijen, van; H.J. Dolle, ten; F.E. van Straten; P. Lok

doi:10.1109/BIPOL.2006.311134

MEMS-based reconfigurable multi-band BiCMOS power amplifier

A.J.M. Graauw, de
, P.G. Steeneken
, C. Chanlo
, S. Pramm
, A. Bezooijen, van
, H.J. Dolle, ten
, F.E. van Straten
, P. Lok

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

Abstract

This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm2, offers 31dBm with 40% efficiency at 0.9GHz and 30dBm with 34% at 1.8GHz. The load-switch provides up to 10% efficiency improvement at 0.9GHz for reduced power levels

Original language	English
Title of host publication	proceeding of IEEE 2006 Bipolar Circuits and Technology Meeting (BCTM2006)
Pages	17-20
DOIs	https://doi.org/10.1109/BIPOL.2006.311134
Publication status	Published - 2006
Event	2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands - Maastricht, Netherlands Duration: 8 Oct 2006 → 10 Oct 2006

Conference

Conference	2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands
Abbreviated title	BCTM 2006
Country/Territory	Netherlands
City	Maastricht
Period	8/10/06 → 10/10/06

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10.1109/BIPOL.2006.311134

Cite this

@inproceedings{cca9ca685b1f46aca53cc8505e8b4849,

title = "MEMS-based reconfigurable multi-band BiCMOS power amplifier",

abstract = "This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm2, offers 31dBm with 40\% efficiency at 0.9GHz and 30dBm with 34\% at 1.8GHz. The load-switch provides up to 10\% efficiency improvement at 0.9GHz for reduced power levels",

author = "\{Graauw, de\}, A.J.M. and P.G. Steeneken and C. Chanlo and S. Pramm and \{Bezooijen, van\}, A. and \{Dolle, ten\}, H.J. and \{van Straten\}, F.E. and P. Lok",

year = "2006",

doi = "10.1109/BIPOL.2006.311134",

language = "English",

pages = "17--20",

booktitle = "proceeding of IEEE 2006 Bipolar Circuits and Technology Meeting (BCTM2006)",

note = "2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands, BCTM 2006 ; Conference date: 08-10-2006 Through 10-10-2006",

}

Graauw, de, AJM, Steeneken, PG, Chanlo, C, Pramm, S, Bezooijen, van, A, Dolle, ten, HJ, van Straten, FE & Lok, P 2006, MEMS-based reconfigurable multi-band BiCMOS power amplifier. in proceeding of IEEE 2006 Bipolar Circuits and Technology Meeting (BCTM2006). pp. 17-20, 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands, Maastricht, Netherlands, 8/10/06. https://doi.org/10.1109/BIPOL.2006.311134

TY - GEN

T1 - MEMS-based reconfigurable multi-band BiCMOS power amplifier

AU - Graauw, de, A.J.M.

AU - Steeneken, P.G.

AU - Chanlo, C.

AU - Pramm, S.

AU - Bezooijen, van, A.

AU - Dolle, ten, H.J.

AU - van Straten, F.E.

AU - Lok, P.

PY - 2006

Y1 - 2006

N2 - This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm2, offers 31dBm with 40% efficiency at 0.9GHz and 30dBm with 34% at 1.8GHz. The load-switch provides up to 10% efficiency improvement at 0.9GHz for reduced power levels

AB - This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm2, offers 31dBm with 40% efficiency at 0.9GHz and 30dBm with 34% at 1.8GHz. The load-switch provides up to 10% efficiency improvement at 0.9GHz for reduced power levels

U2 - 10.1109/BIPOL.2006.311134

DO - 10.1109/BIPOL.2006.311134

M3 - Conference contribution

SP - 17

EP - 20

BT - proceeding of IEEE 2006 Bipolar Circuits and Technology Meeting (BCTM2006)

T2 - 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands

Y2 - 8 October 2006 through 10 October 2006

ER -

MEMS-based reconfigurable multi-band BiCMOS power amplifier

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