MEMS-based reconfigurable multi-band BiCMOS power amplifier

A.J.M. Graauw, de, P.G. Steeneken, C. Chanlo, S. Pramm, A. Bezooijen, van, H.J. Dolle, ten, F.E. van Straten, P. Lok

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

7 Citations (Scopus)

Abstract

This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm2, offers 31dBm with 40% efficiency at 0.9GHz and 30dBm with 34% at 1.8GHz. The load-switch provides up to 10% efficiency improvement at 0.9GHz for reduced power levels
Original languageEnglish
Title of host publicationproceeding of IEEE 2006 Bipolar Circuits and Technology Meeting (BCTM2006)
Pages17-20
DOIs
Publication statusPublished - 2006
Event2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands - Maastricht, Netherlands
Duration: 8 Oct 200610 Oct 2006

Conference

Conference2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2006), October 8-10, 2006, Maastricht, The Netherlands
Abbreviated titleBCTM 2006
CountryNetherlands
CityMaastricht
Period8/10/0610/10/06

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