Mechanism of the reaction of WF6 and Si

P. A.C. Groenen; J. G.A. Hölscher; H. H. Brongersma

doi:10.1016/0169-4332(94)00115-4

Mechanism of the reaction of WF₆ and Si

P. A.C. Groenen, J. G.A. Hölscher, H. H. Brongersma

Applied Physics and Science Education

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The Chemical Vapour Deposition (CVD) of W on Si, using WF₆(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for p_WF₆ = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15-20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF₆ supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.

Original language	English
Pages (from-to)	123-132
Number of pages	10
Journal	Applied Surface Science
Volume	78
Issue number	2
DOIs	https://doi.org/10.1016/0169-4332(94)00115-4
Publication status	Published - Jun 1994

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title = "Mechanism of the reaction of WF6 and Si",

abstract = "The Chemical Vapour Deposition (CVD) of W on Si, using WF6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for pWF6 = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15-20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.",

author = "Groenen, {P. A.C.} and H{\"o}lscher, {J. G.A.} and Brongersma, {H. H.}",

year = "1994",

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journal = "Applied Surface Science",

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T1 - Mechanism of the reaction of WF6 and Si

AU - Groenen, P. A.C.

AU - Hölscher, J. G.A.

AU - Brongersma, H. H.

PY - 1994/6

Y1 - 1994/6

N2 - The Chemical Vapour Deposition (CVD) of W on Si, using WF6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for pWF6 = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15-20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.

AB - The Chemical Vapour Deposition (CVD) of W on Si, using WF6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for pWF6 = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15-20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.

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JO - Applied Surface Science

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ER -

Mechanism of the reaction of WF₆ and Si

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