Mechanism of the reaction of WF6 and Si

P. A.C. Groenen, J. G.A. Hölscher, H. H. Brongersma

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7 Citations (Scopus)

Abstract

The Chemical Vapour Deposition (CVD) of W on Si, using WF6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for pWF6 = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15-20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.

Original languageEnglish
Pages (from-to)123-132
Number of pages10
JournalApplied Surface Science
Volume78
Issue number2
DOIs
Publication statusPublished - Jun 1994

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