Mechanism of C60 crystal growth from the vapour

M.A. Verheijen; W.J.P. van Enckevort

doi:10.1016/S0022-0248(96)00721-X

Mechanism of C₆₀ crystal growth from the vapour

M.A. Verheijen, W.J.P. van Enckevort

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

Abstract

The crystal growth of C₆₀ from the vapour phase has been studied by surface topography of slowly cooled and quenched crystals. Two growth mechanisms were found to be present: hopper growth and step growth from dislocation and eventually other defect sources. The results were interpreted using existing crystal growth theories concerning volume transport, surface migration and kink integration limited growth. On the basis of step shapes and growth rates it was concluded that the growth is determined by volume and surface diffusion.

Original language	English
Pages (from-to)	136-144
Number of pages	9
Journal	Journal of Crystal Growth
Volume	172
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(96)00721-X
Publication status	Published - Feb 1997
Externally published	Yes

Funding

We are very grateful to the referee for suggesting a more accurate model to describe the vapour transport rate. M.A.V. gratefully acknowledges the financial support of the Netherlands Organization for Scientific Research (NWO/SON).

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10.1016/S0022-0248(96)00721-X

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title = "Mechanism of C60 crystal growth from the vapour",

abstract = "The crystal growth of C60 from the vapour phase has been studied by surface topography of slowly cooled and quenched crystals. Two growth mechanisms were found to be present: hopper growth and step growth from dislocation and eventually other defect sources. The results were interpreted using existing crystal growth theories concerning volume transport, surface migration and kink integration limited growth. On the basis of step shapes and growth rates it was concluded that the growth is determined by volume and surface diffusion.",

author = "M.A. Verheijen and \{van Enckevort\}, W.J.P.",

note = "Funding Information: We are very grateful to the referee for suggesting a more accurate model to describe the vapour transport rate. M.A.V. gratefully acknowledges the financial support of the Netherlands Organization for Scientific Research (NWO/SON).",

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AU - van Enckevort, W.J.P.

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PY - 1997/2

Y1 - 1997/2

N2 - The crystal growth of C60 from the vapour phase has been studied by surface topography of slowly cooled and quenched crystals. Two growth mechanisms were found to be present: hopper growth and step growth from dislocation and eventually other defect sources. The results were interpreted using existing crystal growth theories concerning volume transport, surface migration and kink integration limited growth. On the basis of step shapes and growth rates it was concluded that the growth is determined by volume and surface diffusion.

AB - The crystal growth of C60 from the vapour phase has been studied by surface topography of slowly cooled and quenched crystals. Two growth mechanisms were found to be present: hopper growth and step growth from dislocation and eventually other defect sources. The results were interpreted using existing crystal growth theories concerning volume transport, surface migration and kink integration limited growth. On the basis of step shapes and growth rates it was concluded that the growth is determined by volume and surface diffusion.

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ER -

Mechanism of C₆₀ crystal growth from the vapour

Abstract

Funding

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