Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

S. Agarwal; S. Sriraman; A. Takano; M.C.M. Sanden, van de; E.S. Aydil; D. Maroudas

doi:10.1016/S0039-6028(02)01879-4

Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

S. Agarwal
, S. Sriraman
, A. Takano
, M.C.M. Sanden, van de
, E.S. Aydil
, D. Maroudas

Plasma & Materials Processing

Research output: Contribution to journal › Article › Academic › peer-review

28 Citations (Scopus)

Abstract

Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley–Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.

Original language	English
Pages (from-to)	L469-L474
Journal	Surface Science
Volume	515
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(02)01879-4
Publication status	Published - 2002

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title = "Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces",

abstract = "Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley{\textendash}Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.",

author = "S. Agarwal and S. Sriraman and A. Takano and \{Sanden, van de\}, M.C.M. and E.S. Aydil and D. Maroudas",

year = "2002",

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T1 - Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

AU - Agarwal, S.

AU - Sriraman, S.

AU - Takano, A.

AU - Sanden, van de, M.C.M.

AU - Aydil, E.S.

AU - Maroudas, D.

PY - 2002

Y1 - 2002

N2 - Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley–Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.

AB - Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley–Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.

U2 - 10.1016/S0039-6028(02)01879-4

DO - 10.1016/S0039-6028(02)01879-4

M3 - Article

SN - 0039-6028

VL - 515

SP - L469-L474

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

Abstract

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