Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley–Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.
Agarwal, S., Sriraman, S., Takano, A., Sanden, van de, M. C. M., Aydil, E. S., & Maroudas, D. (2002). Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces. Surface Science, 515(1), L469-L474. https://doi.org/10.1016/S0039-6028(02)01879-4