Material properties and growth process of microcrystalline silcion with growth rates in excess of 1 mm/s

E.A.G. Hamers; A.H.M. Smets; C. Smit; J.P.M. Hoefnagels; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1557/PROC-664-A4.2

Material properties and growth process of microcrystalline silcion with growth rates in excess of 1 mm/s

E.A.G. Hamers, A.H.M. Smets, C. Smit, J.P.M. Hoefnagels, W.M.M. Kessels, M.C.M. Sanden, van de

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

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Abstract

The expanding thermal plasma (ETP) has been used to deposit microcrystalline silicon(ìc-Si:H) with rates up to 2.7 nm/s. Typical material properties of well crystallised materialare crystallite sizes of 20 nm, photo- and dark conductivity of 2x10-5 and 2x10-7 S/cmrespectively, and an activation energy of 600 meV. The radical densities of SiH3, SiH, and Sipresent in the gas phase have been quantified. In conditions where ìc-Si:H is deposited theatomic hydrogen flux towards the surface is of the same magnitude or higher as the flux ofdeposited radicals. Furthermore, the abundance of radicals such as SiH and Si is large andmay contribute several tens of percent to the deposition rate.

Original language	English
Title of host publication	Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A
Editors	M. Stutzmann
Place of Publication	Warrendale
Publisher	Materials Research Society
Chapter	A4.2
Number of pages	6
ISBN (Print)	1-558-99600-1
DOIs	https://doi.org/10.1557/PROC-664-A4.2
Publication status	Published - 2001
Event	2001MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 16 Apr 2001 → 20 Apr 2001 https://www.mrs.org/spring2001

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	664
ISSN (Print)	0272-9172

Conference

Conference	2001MRS Spring Meeting & Exhibit
Country/Territory	United States
City	San Francisco
Period	16/04/01 → 20/04/01
Other
Internet address	https://www.mrs.org/spring2001

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10.1557/PROC-664-A4.2

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Hamers, E. A. G., Smets, A. H. M., Smit, C., Hoefnagels, J. P. M., Kessels, W. M. M., & Sanden, van de, M. C. M. (2001). Material properties and growth process of microcrystalline silcion with growth rates in excess of 1 mm/s. In M. Stutzmann (Ed.), Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings; Vol. 664). Materials Research Society. https://doi.org/10.1557/PROC-664-A4.2

Hamers, E.A.G. ; Smets, A.H.M. ; Smit, C. et al. / Material properties and growth process of microcrystalline silcion with growth rates in excess of 1 mm/s. Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A. editor / M. Stutzmann. Warrendale : Materials Research Society, 2001. (Materials Research Society Symposium Proceedings).

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abstract = "The expanding thermal plasma (ETP) has been used to deposit microcrystalline silicon({\`i}c-Si:H) with rates up to 2.7 nm/s. Typical material properties of well crystallised materialare crystallite sizes of 20 nm, photo- and dark conductivity of 2x10-5 and 2x10-7 S/cmrespectively, and an activation energy of 600 meV. The radical densities of SiH3, SiH, and Sipresent in the gas phase have been quantified. In conditions where {\`i}c-Si:H is deposited theatomic hydrogen flux towards the surface is of the same magnitude or higher as the flux ofdeposited radicals. Furthermore, the abundance of radicals such as SiH and Si is large andmay contribute several tens of percent to the deposition rate.",

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Hamers, EAG, Smets, AHM, Smit, C, Hoefnagels, JPM , Kessels, WMM & Sanden, van de, MCM 2001, Material properties and growth process of microcrystalline silcion with growth rates in excess of 1 mm/s. in M Stutzmann (ed.), Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A. Materials Research Society Symposium Proceedings, vol. 664, Materials Research Society, Warrendale, 2001MRS Spring Meeting & Exhibit, San Francisco, California, United States, 16/04/01. https://doi.org/10.1557/PROC-664-A4.2

Material properties and growth process of microcrystalline silcion with growth rates in excess of 1 mm/s. / Hamers, E.A.G.; Smets, A.H.M.; Smit, C. et al.
Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A. ed. / M. Stutzmann. Warrendale: Materials Research Society, 2001. (Materials Research Society Symposium Proceedings; Vol. 664).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Hamers, E.A.G.

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AB - The expanding thermal plasma (ETP) has been used to deposit microcrystalline silicon(ìc-Si:H) with rates up to 2.7 nm/s. Typical material properties of well crystallised materialare crystallite sizes of 20 nm, photo- and dark conductivity of 2x10-5 and 2x10-7 S/cmrespectively, and an activation energy of 600 meV. The radical densities of SiH3, SiH, and Sipresent in the gas phase have been quantified. In conditions where ìc-Si:H is deposited theatomic hydrogen flux towards the surface is of the same magnitude or higher as the flux ofdeposited radicals. Furthermore, the abundance of radicals such as SiH and Si is large andmay contribute several tens of percent to the deposition rate.

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T3 - Materials Research Society Symposium Proceedings

BT - Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A

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Hamers EAG, Smets AHM, Smit C, Hoefnagels JPM , Kessels WMM , Sanden, van de MCM. Material properties and growth process of microcrystalline silcion with growth rates in excess of 1 mm/s. In Stutzmann M, editor, Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A. Warrendale: Materials Research Society. 2001. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-664-A4.2

Material properties and growth process of microcrystalline silcion with growth rates in excess of 1 mm/s

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