Material properties and growth process of microcrystalline silcion with growth rates in excess of 1 mm/s

E.A.G. Hamers, A.H.M. Smets, C. Smit, J.P.M. Hoefnagels, W.M.M. Kessels, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)
64 Downloads (Pure)

Abstract

The expanding thermal plasma (ETP) has been used to deposit microcrystalline silicon(ìc-Si:H) with rates up to 2.7 nm/s. Typical material properties of well crystallised materialare crystallite sizes of 20 nm, photo- and dark conductivity of 2x10-5 and 2x10-7 S/cmrespectively, and an activation energy of 600 meV. The radical densities of SiH3, SiH, and Sipresent in the gas phase have been quantified. In conditions where ìc-Si:H is deposited theatomic hydrogen flux towards the surface is of the same magnitude or higher as the flux ofdeposited radicals. Furthermore, the abundance of radicals such as SiH and Si is large andmay contribute several tens of percent to the deposition rate.
Original languageEnglish
Title of host publicationAmorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A
EditorsM. Stutzmann
Place of PublicationWarrendale
PublisherMaterials Research Society
ChapterA4.2
Number of pages6
ISBN (Print)1-558-99600-1
DOIs
Publication statusPublished - 2001
Event2001 Amorphous and Heterogeneous Silicon Based Films Symposium - San Francisco, CA, United States
Duration: 16 Apr 200120 Apr 2001

Publication series

NameMaterials Research Society Symposium Proceedings
Volume664
ISSN (Print)0272-9172

Conference

Conference2001 Amorphous and Heterogeneous Silicon Based Films Symposium
CountryUnited States
CitySan Francisco, CA
Period16/04/0120/04/01
OtherSymposium held at the 2001 MRS Spring Meeting

Opmerking (HdW):
Eerste "relation" koppelen aan "event': Wide-Bandgap Electronics, April 16-20, 2001, San Francisco, CA, USA (Symposium held at the 2001 MRS Spring Meeting)

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