Free electron laser for IR expts. was employed to examine GaAs-based two-dimensional electron gases (2DEG) systems in the presence of quantizing magnetic fields and an intense laser field in the Faraday geometry. The electronic transition rate induced by magnetophoton-phonon scattering was obtained which was applied to the calcn. of the magnetotransport coeffs. in the presence of an intense radiation field. Strong magneto-optical effects were obsd. for semiconductor nanostructures such as GaAs-based 2DEG systems when the magnetic field B .apprx. 1 T, the radiation frequency f .apprx. 1 THz, and radiation intensity F0 .apprx. 1 kV/cm. These radiation conditions were studied by the current generation of the THz or far-IR free-electron lasers.
|Number of pages||10|
|Journal||Condensed Matter Theories|
|Publication status||Published - 2003|