Magnetophoton-phonon scattering in two-dimensional electron gases

W. Xu, R.A. Lewis, P.M. Koenraad, L.R.C. Waumans, C.J.G.M. Langerak

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Abstract

Free electron laser for IR expts. was employed to examine GaAs-based two-dimensional electron gases (2DEG) systems in the presence of quantizing magnetic fields and an intense laser field in the Faraday geometry. The electronic transition rate induced by magnetophoton-phonon scattering was obtained which was applied to the calcn. of the magnetotransport coeffs. in the presence of an intense radiation field. Strong magneto-optical effects were obsd. for semiconductor nanostructures such as GaAs-based 2DEG systems when the magnetic field B .apprx. 1 T, the radiation frequency f .apprx. 1 THz, and radiation intensity F0 .apprx. 1 kV/cm. These radiation conditions were studied by the current generation of the THz or far-IR free-electron lasers.
Original languageEnglish
Pages (from-to)373-382
Number of pages10
JournalCondensed Matter Theories
Volume17
Publication statusPublished - 2003

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    Xu, W., Lewis, R. A., Koenraad, P. M., Waumans, L. R. C., & Langerak, C. J. G. M. (2003). Magnetophoton-phonon scattering in two-dimensional electron gases. Condensed Matter Theories, 17, 373-382.