Magneto-tunnelling in double-barrier structures: the B perpendicular to J configuration

H.J.M.F. Noteborn, G. H.M. Van Tartwijk, D. Lenstra

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

The peak in the current-voltage (I-V) characteristic of a double-barrier resonant-tunnelling structure is broadened and lowered by the application of a magnetic field parallel to the layers. The broadening of the peak is roughly linear in the field. The lowering is completed at a field strength termed the quenching field. Both effects are described within a model of coherent tunnelling in a self-consistent potential. The calculated I-V curves agree well with experimental data.

Original languageEnglish
Article number013
Pages (from-to)4125-4134
Number of pages10
JournalJournal of Physics: Condensed Matter
Volume4
Issue number16
DOIs
Publication statusPublished - 1 Dec 1992

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