Abstract
A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the multi-layer structure also includes an intermediate layer provided between the barrier layer and one of the electrode layers and including a conductive material having a work function with a value which is at least 25% lower than the value of the work function of the material of the respective electrode layer.
Original language | English |
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Patent number | US6295225 |
IPC | H01L 45/ 00 A I |
Priority date | 14/05/99 |
Publication status | Published - 25 Sept 2001 |