Magnetic properties and interlayer coupling of epitaxial Co/Cu films on Si

R. Mansell, D. C. M. C. Petit, A. Fernandez-Pacheco, R. Lavrijsen, J. H. Lee, R. P. Cowburn

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Abstract

Thin films of Co and Co/Cu/Co trilayers with wedged Cu interlayers were grown epitaxially on Cu buffer layers on hydrogen passivated Si(001) wafers. We find that single Co layers have a well-defined four-fold anisotropy but with smaller in-plane anisotropies than observed in Co grown on Cu crystals. Ruderman–Kittel–Kasuya–Yosida (RKKY) interlayer coupling is observed in one Co/Cu/Co sample which is the smoothest of the films as measured by atomic force microscopy. Some of the films also form a dot-like structure on the surface. Intermixing at elevated temperatures between the Cu buffer and Si limits the ability to form flat surfaces to promote RKKY coupling.
Original languageEnglish
Article number063906
Pages (from-to)1-6
JournalJournal of Applied Physics
Volume116
Issue number6
DOIs
Publication statusPublished - 14 Aug 2014

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