Luminescence of a delta doping related exciton in GaAs:Si

J.C.M. Henning; Y.A.R.R. Kessener; P.M. Koenraad; M.R. Leijs; W.C. Vleuten, van der; J.H. Wolter; A.M. Frens

doi:10.4028/www.scientific.net/MSF.143-147.653

Luminescence of a delta doping related exciton in GaAs:Si

J.C.M. Henning
, Y.A.R.R. Kessener
, P.M. Koenraad
, M.R. Leijs
, W.C. Vleuten, van der
, J.H. Wolter
, A.M. Frens

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Photoluminescence spectra of Si d-doped GaAs show a sharp future at 1.4977 eV with phonon replicas (5.2 meV apart) due to an exciton bound to an isoelectronic centre, introduced by the delta doping procedure. A reasonable model for the isoelectronic centre involved is a Si-As-Si complex with the Si-Si axis along [1-10].

Original language	English
Pages (from-to)	653-656
Journal	Materials Science Forum
Volume	143-147
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.143-147.653
Publication status	Published - 1994

Access to Document

10.4028/www.scientific.net/MSF.143-147.653

Cite this

@article{e548f1c683654d3983e1e24123659d8b,

title = "Luminescence of a delta doping related exciton in GaAs:Si",

abstract = "Photoluminescence spectra of Si d-doped GaAs show a sharp future at 1.4977 eV with phonon replicas (5.2 meV apart) due to an exciton bound to an isoelectronic centre, introduced by the delta doping procedure. A reasonable model for the isoelectronic centre involved is a Si-As-Si complex with the Si-Si axis along [1-10].",

author = "J.C.M. Henning and Y.A.R.R. Kessener and P.M. Koenraad and M.R. Leijs and \{Vleuten, van der\}, W.C. and J.H. Wolter and A.M. Frens",

year = "1994",

doi = "10.4028/www.scientific.net/MSF.143-147.653",

language = "English",

volume = "143-147",

pages = "653--656",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Luminescence of a delta doping related exciton in GaAs:Si

AU - Henning, J.C.M.

AU - Kessener, Y.A.R.R.

AU - Koenraad, P.M.

AU - Leijs, M.R.

AU - Vleuten, van der, W.C.

AU - Wolter, J.H.

AU - Frens, A.M.

PY - 1994

Y1 - 1994

N2 - Photoluminescence spectra of Si d-doped GaAs show a sharp future at 1.4977 eV with phonon replicas (5.2 meV apart) due to an exciton bound to an isoelectronic centre, introduced by the delta doping procedure. A reasonable model for the isoelectronic centre involved is a Si-As-Si complex with the Si-Si axis along [1-10].

AB - Photoluminescence spectra of Si d-doped GaAs show a sharp future at 1.4977 eV with phonon replicas (5.2 meV apart) due to an exciton bound to an isoelectronic centre, introduced by the delta doping procedure. A reasonable model for the isoelectronic centre involved is a Si-As-Si complex with the Si-Si axis along [1-10].

U2 - 10.4028/www.scientific.net/MSF.143-147.653

DO - 10.4028/www.scientific.net/MSF.143-147.653

M3 - Article

SN - 0255-5476

VL - 143-147

SP - 653

EP - 656

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Luminescence of a delta doping related exciton in GaAs:Si

Abstract

Access to Document

Fingerprint

Cite this