LPE of InP and InGaAsP on InP substrates : a verification of the diffusion limited growth model

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@article{2ced84e0c5934879bf48bbb444f242f0,

title = "LPE of InP and InGaAsP on InP substrates : a verification of the diffusion limited growth model",

author = "P.J.A. Thijs and W. Nijman and R. Metselaar",

year = "1986",

doi = "10.1016/0022-0248(86)90209-5",

language = "English",

volume = "74",

pages = "625--634",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - LPE of InP and InGaAsP on InP substrates : a verification of the diffusion limited growth model

AU - Thijs, P.J.A.

AU - Nijman, W.

AU - Metselaar, R.

PY - 1986

Y1 - 1986

U2 - 10.1016/0022-0248(86)90209-5

DO - 10.1016/0022-0248(86)90209-5

M3 - Article

SN - 0022-0248

VL - 74

SP - 625

EP - 634

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -