Abstract
We have calculated the contribution of the lowest-order vertex-correction diagram to the direct gap of silicon at the Gamma -point, taking into account the dynamic screening of the electron-electron interaction. Our best calculation yields a contribution of 0.12 eV. This result supports the assumption of the GW approximation that vertex corrections can be neglected. We do not find a significant shift of the absolute energies
| Original language | English |
|---|---|
| Pages (from-to) | 10326-10331 |
| Number of pages | 6 |
| Journal | Physical Review B: Condensed Matter |
| Volume | 49 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 1994 |
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