Lowest-order vertex-correction contribution to the direct gap of silicon

P.A. Bobbert, W. van Haeringen

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Abstract

We have calculated the contribution of the lowest-order vertex-correction diagram to the direct gap of silicon at the Gamma -point, taking into account the dynamic screening of the electron-electron interaction. Our best calculation yields a contribution of 0.12 eV. This result supports the assumption of the GW approximation that vertex corrections can be neglected. We do not find a significant shift of the absolute energies
Original languageEnglish
Pages (from-to)10326-10331
Number of pages6
JournalPhysical Review B: Condensed Matter
Volume49
Issue number15
DOIs
Publication statusPublished - 1994

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