Abstract
A high-speed, high-gain enhancement-mode ion-gated transistor shows promise for low-power chronically implanted bioelectronic systems.
Original language | English |
---|---|
Pages (from-to) | 584-586 |
Number of pages | 3 |
Journal | Nature Materials |
Volume | 19 |
Issue number | 6 |
DOIs |
|
Publication status | Published - 1 Jun 2020 |