Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

A. K. Tripathi, E.C.P. Smits, J.B.P.H. van der Putten, M. Van Neer, K. Myny, M. Nag, S. Steudel, P. Vicca, K. O'Neill, E. Van Veenendaal, J. Genoe, P. Heremans, G. H. Gelinck

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Abstract

In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors.

Original languageEnglish
Article number162102
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number16
DOIs
Publication statusPublished - 18 Apr 2011
Externally publishedYes

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