Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

A. K. Tripathi; E.C.P. Smits; J.B.P.H. van der Putten; M. Van Neer; K. Myny; M. Nag; S. Steudel; P. Vicca; K. O'Neill; E. Van Veenendaal; J. Genoe; P. Heremans; G. H. Gelinck

doi:10.1063/1.3579529

Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

A. K. Tripathi, E.C.P. Smits, J.B.P.H. van der Putten, M. Van Neer, K. Myny, M. Nag, S. Steudel, P. Vicca, K. O'Neill, E. Van Veenendaal, J. Genoe, P. Heremans, G. H. Gelinck

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm² /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors.

Original language	English
Article number	162102
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	16
DOIs	https://doi.org/10.1063/1.3579529
Publication status	Published - 18 Apr 2011
Externally published	Yes

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Tripathi, A. K., Smits, E. C. P., van der Putten, J. B. P. H., Van Neer, M., Myny, K., Nag, M., Steudel, S., Vicca, P., O'Neill, K., Van Veenendaal, E., Genoe, J., Heremans, P., & Gelinck, G. H. (2011). Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application. Applied Physics Letters, 98(16), Article 162102. https://doi.org/10.1063/1.3579529

@article{59df5e2f841547248bcde20e3a3c7a4a,

title = "Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application",

abstract = "In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors.",

author = "Tripathi, {A. K.} and E.C.P. Smits and {van der Putten}, J.B.P.H. and {Van Neer}, M. and K. Myny and M. Nag and S. Steudel and P. Vicca and K. O'Neill and {Van Veenendaal}, E. and J. Genoe and P. Heremans and Gelinck, {G. H.}",

year = "2011",

month = apr,

day = "18",

doi = "10.1063/1.3579529",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

Tripathi, AK, Smits, ECP, van der Putten, JBPH, Van Neer, M, Myny, K, Nag, M, Steudel, S, Vicca, P, O'Neill, K, Van Veenendaal, E, Genoe, J, Heremans, P & Gelinck, GH 2011, 'Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application', Applied Physics Letters, vol. 98, no. 16, 162102. https://doi.org/10.1063/1.3579529

Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application. / Tripathi, A. K.; Smits, E.C.P.; van der Putten, J.B.P.H. et al.
In: Applied Physics Letters, Vol. 98, No. 16, 162102, 18.04.2011.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil

T2 - Building blocks for radio frequency identification application

AU - Tripathi, A. K.

AU - Smits, E.C.P.

AU - van der Putten, J.B.P.H.

AU - Van Neer, M.

AU - Myny, K.

AU - Nag, M.

AU - Steudel, S.

AU - Vicca, P.

AU - O'Neill, K.

AU - Van Veenendaal, E.

AU - Genoe, J.

AU - Heremans, P.

AU - Gelinck, G. H.

PY - 2011/4/18

Y1 - 2011/4/18

N2 - In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors.

AB - In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors.

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U2 - 10.1063/1.3579529

DO - 10.1063/1.3579529

M3 - Article

AN - SCOPUS:79955409471

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162102

ER -

Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

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