Abstract
A mask-defined array of multiple-wavelength vertical-cavity surface-emitting lasers with sub-milliamp threshold currents over a 22. nm wavelength span was fabricated with a single epitaxial growth on a conventional substrate. Tuning is achieved by using the combination of lateral and vertical wet oxidn. of an AlGaAs layer inside the cavity. [on SciFinder (R)]
| Original language | English |
|---|---|
| Pages (from-to) | 1857-1858 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 34 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 1998 |
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