Low-temperature plasma-assisted atomic-layer-deposited SnO2 as an electron transport layer in planar Perovskite solar cells

Y. Kuang, V. Zardetto, R.J. van Gils, S. Karwal, D. Koushik, M.A. Verheijen, L.E. Black, C.H.L. Weijtens, Sjoerd C. Veenstra, H.A.J.M. (Ronn) Andriessen, W.M.M. Kessels, M. Creatore

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Abstract

In this work, we present an extensive characterization of plasma-assisted atomic-layer-deposited SnO2 layers, with the aim of identifying key material properties of SnO2 to serve as an efficient electron transport layer in perovskite solar cells (PSCs). Electrically resistive SnO2 films are fabricated at 50 °C, while a SnO2 film with a low electrical resistivity of 1.8 × 10−3Ω cm, a carrier density of 9.6 × 1019 cm−3, and a high mobility of 36.0 cm2
/V s is deposited at 200 °C. Ultraviolet photoelectron spectroscopy indicates a conduction band offset of ∼0.69 eV at the 50 °C SnO2/Cs0.05(MA0.17FA0.83)
0.95Pb-(I2.7Br0.3) interface. In contrast, a negligible conduction band offset is found between the 200 °C SnO2 and the perovskite. Surprisingly, comparable initial power conversion efficiencies (PCEs) of 17.5 and 17.8% are demonstrated for the champion cells using 15 nm thick SnO2 deposited at 50 and 200 °C,
respectively. The latter gains in fill factor but loses in open-circuit voltage. Markedly, PSCs using the 200 °C compact SnO2 retain their initial performance at the maximum power point over 16 h under continuous one-sun illumination in inert atmosphere. Instead, the cell with the 50 °C SnO2 shows a decrease in PCE of approximately 50%.
Original languageEnglish
Pages (from-to)30367-30378
JournalACS Applied Materials & Interfaces
Volume10
Issue number36
Early online date16 Aug 2018
DOIs
Publication statusPublished - 1 Oct 2018

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Conduction bands
Conversion efficiency
Ultraviolet photoelectron spectroscopy
Plasmas
Open circuit voltage
Sun
Perovskite
Carrier concentration
Materials properties
Lighting
Temperature
Electron Transport
Perovskite solar cells
perovskite

Cite this

@article{a1c70d0f0e0f4ef38718302365fa072e,
title = "Low-temperature plasma-assisted atomic-layer-deposited SnO2 as an electron transport layer in planar Perovskite solar cells",
abstract = "In this work, we present an extensive characterization of plasma-assisted atomic-layer-deposited SnO2 layers, with the aim of identifying key material properties of SnO2 to serve as an efficient electron transport layer in perovskite solar cells (PSCs). Electrically resistive SnO2 films are fabricated at 50 °C, while a SnO2 film with a low electrical resistivity of 1.8 × 10−3Ω cm, a carrier density of 9.6 × 1019 cm−3, and a high mobility of 36.0 cm2/V s is deposited at 200 °C. Ultraviolet photoelectron spectroscopy indicates a conduction band offset of ∼0.69 eV at the 50 °C SnO2/Cs0.05(MA0.17FA0.83)0.95Pb-(I2.7Br0.3) interface. In contrast, a negligible conduction band offset is found between the 200 °C SnO2 and the perovskite. Surprisingly, comparable initial power conversion efficiencies (PCEs) of 17.5 and 17.8{\%} are demonstrated for the champion cells using 15 nm thick SnO2 deposited at 50 and 200 °C,respectively. The latter gains in fill factor but loses in open-circuit voltage. Markedly, PSCs using the 200 °C compact SnO2 retain their initial performance at the maximum power point over 16 h under continuous one-sun illumination in inert atmosphere. Instead, the cell with the 50 °C SnO2 shows a decrease in PCE of approximately 50{\%}.",
author = "Y. Kuang and V. Zardetto and {van Gils}, R.J. and S. Karwal and D. Koushik and M.A. Verheijen and L.E. Black and C.H.L. Weijtens and Veenstra, {Sjoerd C.} and Andriessen, {H.A.J.M. (Ronn)} and W.M.M. Kessels and M. Creatore",
year = "2018",
month = "10",
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doi = "10.1021/acsami.8b09515",
language = "English",
volume = "10",
pages = "30367--30378",
journal = "ACS Applied Materials & Interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
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}

Low-temperature plasma-assisted atomic-layer-deposited SnO2 as an electron transport layer in planar Perovskite solar cells. / Kuang, Y.; Zardetto, V.; van Gils, R.J.; Karwal, S.; Koushik, D.; Verheijen, M.A.; Black, L.E.; Weijtens, C.H.L.; Veenstra, Sjoerd C.; Andriessen, H.A.J.M. (Ronn); Kessels, W.M.M.; Creatore, M.

In: ACS Applied Materials & Interfaces, Vol. 10, No. 36, 01.10.2018, p. 30367-30378.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Low-temperature plasma-assisted atomic-layer-deposited SnO2 as an electron transport layer in planar Perovskite solar cells

AU - Kuang, Y.

AU - Zardetto, V.

AU - van Gils, R.J.

AU - Karwal, S.

AU - Koushik, D.

AU - Verheijen, M.A.

AU - Black, L.E.

AU - Weijtens, C.H.L.

AU - Veenstra, Sjoerd C.

AU - Andriessen, H.A.J.M. (Ronn)

AU - Kessels, W.M.M.

AU - Creatore, M.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - In this work, we present an extensive characterization of plasma-assisted atomic-layer-deposited SnO2 layers, with the aim of identifying key material properties of SnO2 to serve as an efficient electron transport layer in perovskite solar cells (PSCs). Electrically resistive SnO2 films are fabricated at 50 °C, while a SnO2 film with a low electrical resistivity of 1.8 × 10−3Ω cm, a carrier density of 9.6 × 1019 cm−3, and a high mobility of 36.0 cm2/V s is deposited at 200 °C. Ultraviolet photoelectron spectroscopy indicates a conduction band offset of ∼0.69 eV at the 50 °C SnO2/Cs0.05(MA0.17FA0.83)0.95Pb-(I2.7Br0.3) interface. In contrast, a negligible conduction band offset is found between the 200 °C SnO2 and the perovskite. Surprisingly, comparable initial power conversion efficiencies (PCEs) of 17.5 and 17.8% are demonstrated for the champion cells using 15 nm thick SnO2 deposited at 50 and 200 °C,respectively. The latter gains in fill factor but loses in open-circuit voltage. Markedly, PSCs using the 200 °C compact SnO2 retain their initial performance at the maximum power point over 16 h under continuous one-sun illumination in inert atmosphere. Instead, the cell with the 50 °C SnO2 shows a decrease in PCE of approximately 50%.

AB - In this work, we present an extensive characterization of plasma-assisted atomic-layer-deposited SnO2 layers, with the aim of identifying key material properties of SnO2 to serve as an efficient electron transport layer in perovskite solar cells (PSCs). Electrically resistive SnO2 films are fabricated at 50 °C, while a SnO2 film with a low electrical resistivity of 1.8 × 10−3Ω cm, a carrier density of 9.6 × 1019 cm−3, and a high mobility of 36.0 cm2/V s is deposited at 200 °C. Ultraviolet photoelectron spectroscopy indicates a conduction band offset of ∼0.69 eV at the 50 °C SnO2/Cs0.05(MA0.17FA0.83)0.95Pb-(I2.7Br0.3) interface. In contrast, a negligible conduction band offset is found between the 200 °C SnO2 and the perovskite. Surprisingly, comparable initial power conversion efficiencies (PCEs) of 17.5 and 17.8% are demonstrated for the champion cells using 15 nm thick SnO2 deposited at 50 and 200 °C,respectively. The latter gains in fill factor but loses in open-circuit voltage. Markedly, PSCs using the 200 °C compact SnO2 retain their initial performance at the maximum power point over 16 h under continuous one-sun illumination in inert atmosphere. Instead, the cell with the 50 °C SnO2 shows a decrease in PCE of approximately 50%.

U2 - 10.1021/acsami.8b09515

DO - 10.1021/acsami.8b09515

M3 - Article

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VL - 10

SP - 30367

EP - 30378

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

SN - 1944-8244

IS - 36

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